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NSBA143EDXV6T1

Onsemi

NSBA143EDXV6T1 by Onsemi

NSBA143EDXV6T1 by Onsemi is a PNP BJT transistor with 2 elements, built-in resistor, and hFE of 15. It is used for switching applications with max VCE of 50V and IC of 0.1A. The package is small outline, surface mountable, with 6 terminals in a rectangular shape.

Median Price

$0.053

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 44,000 parts In-Stock

1+ parts

-

100+ parts

$0.053

1k+ parts

$0.044

10k+ parts

$0.039

44,000

-

$0.053

$0.044

$0.039

DigiKey

USA . 44,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.070

44,000

-

-

-

$0.070

Verical

USA . 44,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.049

44,000

-

-

-

$0.049

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 158 parts In-Stock

1+ parts

$0.041

100+ parts

-

1k+ parts

-

10k+ parts

-

158

$0.041

-

-

-

Chip Stock

USA . 38,000 parts In-Stock

1+ parts

-

100+ parts

-

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38,000

-

-

-

-

Vyrian

USA . 11,278 parts In-Stock

1+ parts

-

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-

1k+ parts

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11,278

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 43,995 parts In-Stock

1+ parts

$0.037

100+ parts

-

1k+ parts

-

10k+ parts

-

43,995

$0.037

-

-

-

Corphita

USA . 1,317 parts In-Stock

1+ parts

$0.039

100+ parts

-

1k+ parts

-

10k+ parts

-

1,317

$0.039

-

-

-

Component Stockers USA

USA . 52,764 parts In-Stock

1+ parts

$0.040

100+ parts

$0.040

1k+ parts

$0.040

10k+ parts

$0.040

52,764

$0.040

$0.040

$0.040

$0.040

Corohmni

South Africa . 455 parts In-Stock

1+ parts

$0.043

100+ parts

-

1k+ parts

-

10k+ parts

-

455

$0.043

-

-

-

AZTECH Wire

Italy . 388 parts In-Stock

1+ parts

$10.120

100+ parts

-

1k+ parts

-

10k+ parts

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388

$10.120

-

-

-

Continental Prestige Electronics

USA . 44,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.039

44,000

-

-

-

$0.039

TANS Electronics

Latvia . 7,189 parts In-Stock

1+ parts

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100+ parts

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7,189

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-

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Kulean Microsystems

USA . 6,452 parts In-Stock

1+ parts

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6,452

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SupplyDigital Components

Austria . 4,468 parts In-Stock

1+ parts

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4,468

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UHIMA Technologies

Türkiye . 332 parts In-Stock

1+ parts

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100+ parts

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332

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Problanco Electronics

Mexico . 155 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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155

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Overview

Discover the power of innovation with the NSBA143EDXV6T1 by Onsemi, a top-of-the-line Small Signal Bipolar Junction Transistor. With a focus on quality and reliability, Onsemi delivers unmatched performance in switching applications. This PNP transistor offers seamless integration and high efficiency, making it a must-have for your electronic projects. Elevate your designs with the advanced technology and trusted expertise of Onsemi, setting new standards in the industry.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection to the transistor, ensuring a longer lifespan.

Polarity or Channel Type: PNP

PNP transistors are suitable for high-side switching applications, making this product versatile.

Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

The built-in resistor simplifies circuit design and saves space on the circuit board.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring optimal performance in this use case.

Surface Mount: YES

Surface mount design allows for easy and efficient installation on circuit boards.

Package Shape: RECTANGULAR

Rectangular shape is standard and easy to work with in various circuit designs.

Terminal Form: FLAT

Flat terminals provide a secure connection and ease of soldering.

No. of Elements: 2

Having 2 elements adds versatility to the transistor's functionality.

No. of Terminals: 6

The multiple terminals allow for more connection options in a circuit.

Maximum Power Dissipation (Abs): 0.5 W

With a high power dissipation capacity, this transistor can handle various applications without overheating.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space on the circuit board.

Minimum DC Current Gain (hFE): 15

High minimum DC current gain ensures a reliable and consistent performance.

Maximum Collector-Emitter Voltage: 50 V

This transistor can handle higher voltage levels, increasing its versatility.

Transistor Element Material: SILICON

Silicon is a common and reliable material for transistor elements, ensuring stability and performance.

Maximum Collector Current (IC): 0.1 A

With a high collector current rating, this transistor can handle moderate to high current loads.

Terminal Finish: TIN

Tin terminal finish provides good conductivity and solderability for secure connections.

Terminal Position: DUAL

Dual terminal position allows for more flexible placement in a circuit.

Maximum Time At Peak Reflow Temperature (s): 30

Allows for quick and efficient soldering during PCB assembly.

Peak Reflow Temperature °C: 260

High peak reflow temperature ensures proper soldering and reliability in various environmental conditions.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) NSBA143EDXV6T1 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

BUILT IN BIAS RESISTOR RATIO IS 1

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

15

JESD-30 Code:

R-PDSO-F6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

NSBA143EDXV6T1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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