Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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Small Signal Bipolar Junction Transistors (BJT) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.Small Signal BJTs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.The Small Signal BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a small current flows through the base, allowing a larger current to flow from the emitter to the collector.Proper use of Small Signal BJTs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal BJTs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.B395
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MSB710-RT1G
Onsemi
PNP; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .5 A; Maximum Operating Temperature: 150 Cel;
.5 A
50 V
SINGLE
40
R-PDSO-G3
e3
1
3
150 Cel
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
260
PNP
.2 W
Not Qualified
Other Transistors
YES
TIN
GULL WING
DUAL
30
AMPLIFIER
SILICON
ULN2003AIN
Texas Instruments
ULN2003AIN by Texas Instruments is a NPN BJT transistor with 7 elements and 16 terminals. It has a max collector-emitter voltage of 50V and max collector current of 0.5A, ideal for switching applications. The package style is in-line with terminal finish Ni/Pd/Au, making it suitable for complex configurations in various electronic devices.
LOGIC LEVEL COMPATIBLE
COMPLEX
MS-001BB
R-PDIP-T16
e4
7
16
IN-LINE
NOT SPECIFIED
NPN
NO
Nickel/Palladium/Gold (Ni/Pd/Au)
THROUGH-HOLE
SWITCHING
2N5401RLRAG
2N5401RLRAG by Onsemi is a PNP BJT with max. VCE of 150V, IC of 0.6A, and hFE of 50. Ideal for amplifier applications due to its max. power dissipation of 1.5W and fT of 100MHz in a cylindrical package with through-hole terminals.
.6 A
150 V
50
TO-92
O-PBCY-T3
e1
ROUND
CYLINDRICAL
1.5 W
Tin/Silver/Copper (Sn/Ag/Cu)
BOTTOM
100 MHz
2N5550RLRPG
2N5550RLRPG by Onsemi is a NPN BJT transistor with 140V VCEO, 0.6A IC, and 100MHz fT. Ideal for amplifier applications due to its 1.5W Ptot, hFE of 20, and operating temp up to 150 °C. Features through-hole terminals in a cylindrical package shape.
140 V
20
TIN SILVER COPPER
2N6520RLRAG
2N6520RLRAG by Onsemi is a PNP BJT transistor with max. collector-emitter voltage of 350V, max. power dissipation of 1.5W, and min. DC current gain of 15. Ideal for switching applications due to its high transition frequency of 40MHz and low turn-on time of 200ns. Package style is cylindrical with through-hole terminals for easy mounting.
350 V
15
40 MHz
3500 ns
200 ns
2SA1774G
2SA1774G by Onsemi is a PNP BJT transistor with hFE of 120, ideal for amplifier applications. With a max voltage of 50V and max current of 0.1A, it operates at up to 150°C. Featuring a transition frequency of 140MHz, this surface-mount device in a small outline package is suitable for compact electronic designs.
.1 A
120
.15 W
MATTE TIN
140 MHz
BC368ZL1G
BC368ZL1G by Onsemi is a NPN BJT transistor with 1A IC, 20V VCE, and 65MHz fT. Ideal for amplifier applications due to its high hFE of 85 and max power dissipation of 1.5W. The package is cylindrical with through-hole terminals, making it suitable for various electronic designs.
1 A
20 V
85
65 MHz
BC548BZL1G
BC548BZL1G by Onsemi is a NPN BJT transistor with hFE of 200, VCEO of 30V, and IC of 0.1A. Ideal for amplifier applications, it has a max power dissipation of 1.5W and operates up to 150°C. The package style is cylindrical with through-hole terminals in a plastic/epoxy body.
30 V
200
300 MHz
DTC144WM3T5G
DTC144WM3T5G by Onsemi is a NPN BJT transistor with built-in resistor, ideal for switching applications. It has a max collector-emitter voltage of 50V and can handle a max collector current of 0.1A. With a small outline package style and operating temperature up to 150 °C, it is suitable for surface mount designs requiring compact components.
BUILT-IN BIAS RESISTOR RATIO IS 2.1
SINGLE WITH BUILT-IN RESISTOR
80
R-PDSO-F3
.6 W
BIP General Purpose Small Signal
Matte Tin (Sn) - annealed
FLAT
EMT1DXV6T5
EMT1DXV6T5 by Onsemi is a PNP BJT with 2 elements, hFE of 120, VCE of 60V, and fT of 140MHz. Ideal for amplifier applications, it features a small outline package with 6 terminals and can handle a max collector current of 0.1A.
60 V
SEPARATE, 2 ELEMENTS
R-PDSO-F6
2
6
EMX2DXV6T5
The Onsemi EMX2DXV6T5 is a NPN BJT transistor with 2 elements, hFE of 120, and VCE of 50V. Ideal for amplifier applications, it has a transition frequency of 180MHz and can handle a collector current of 0.1A. Suitable for surface mount with a small outline package style.
180 MHz
NSTB1002DXV5T1
NSTB1002DXV5T1 by Onsemi is a Small Signal BJT with NPN and PNP polarity. It features cascaded configuration with 2 elements, built-in resistor, and a max collector-emitter voltage of 50V. Ideal for switching applications, this transistor has a min hFE of 30 and peak reflow temperature of 260 °C.
BUILT IN BIAS RESISTOR RATIO IS 1
CASCADED, 2 ELEMENTS WITH BUILT-IN RESISTOR
R-PDSO-F5
5
NPN AND PNP
.5 W
250 MHz
300 ns
70 ns
NSTB1005DXV5T1
NPN AND PNP; Configuration: CASCADED, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .1 A; JESD-30 Code: R-PDSO-F5;
BC639-16ZL1G
BC639-16ZL1G by Onsemi is a NPN BJT with max. collector-emitter voltage of 80V and max. collector current of 1A. It has a min. DC current gain of 25 and operates up to 150°C, making it suitable for small signal applications requiring high power dissipation up to 0.8W in cylindrical package style.
80 V
25
TO-226
.8 W
200 MHz
2N3904RLRPG
2N3904RLRPG by Onsemi is a NPN BJT with max. power dissipation of 1.5W, hFE of 30, and fT of 300MHz. Ideal for low-power applications in electronics due to its max. collector-emitter voltage of 40V and max. collector current of 0.2A.
.2 A
40 V
250 ns
2N3906RLRMG
2N3906RLRMG by Onsemi is a PNP BJT with max. power dissipation of 1.5W, hFE of 30, and max. collector-emitter voltage of 40V. Ideal for applications requiring low current amplification in through-hole configurations at up to 150°C operating temperature.
2N4401RLRPG
2N4401RLRPG by Onsemi is a NPN BJT transistor with max. power dissipation of 1.5W, hFE of 40, and max. collector-emitter voltage of 40V. Ideal for switching applications due to its fast turn on/off times (35ns/255ns) and high transition frequency (250MHz).
255 ns
35 ns
BC857CWT1G
BC857CWT1G by Onsemi is a PNP BJT transistor with VCEsat of 0.65V, hFE of 420, and fT of 100MHz. Ideal for amplifier applications due to its small outline package style and max collector-emitter voltage of 45V. Suitable for surface mount designs with matte tin terminal finish.
4.5 pF
45 V
420
-55 Cel
.65 V
MBT35200MT1G
MBT35200MT1G by Onsemi is a PNP BJT transistor with 6 terminals, capable of handling up to 2A collector current. It has a min DC current gain of 100 and operates at a max temperature of 150°C. Ideal for switching applications due to its high transition frequency of 100MHz.
2 A
35 V
100
R-PDSO-G6
1.75 W
MMJT9435T1G
MMJT9435T1G by Onsemi is a PNP BJT with 3W power dissipation, hFE of 90, and max operating temp of 150 °C. Ideal for small outline applications requiring a collector-emitter voltage of 30V, collector current up to 3A, and transition frequency of 110MHz.
COLLECTOR
3 A
90
TO-261AA
R-PDSO-G4
4
3 W
110 MHz
MPS3646G
MPS3646G by Onsemi is a NPN BJT transistor with 3 terminals, ideal for switching applications. It has a max collector-emitter voltage of 15V and max collector current of 0.3A. With a transition frequency of 350MHz, it offers fast turn on/off times making it suitable for high-speed circuits.
.3 A
15 V
.625 W
350 MHz
28 ns
18 ns
MPSA20G
MPSA20G by Onsemi is a NPN BJT transistor with 40V VCEO, 0.1A IC, and 125MHz fT. Ideal for amplifier applications due to its 0.625W Ptot, it features a cylindrical package with through-hole terminals. Operating up to 150 °C, it has a min hFE of 40 and is made of silicon material.
125 MHz
MPSW92RLRAG
MPSW92RLRAG by Onsemi is a PNP BJT with 1W power dissipation, 300V max. collector-emitter voltage, and 50MHz fT. Ideal for small signal applications in electronics due to its high transition frequency and low collector current of 0.5A. The through-hole package with bottom terminal position makes it easy to integrate into various circuit designs.
300 V
1 W
50 MHz
MSB-709RT1G
MSB-709RT1G by Onsemi is a PNP BJT transistor with 3 terminals, ideal for amplifier applications. It has a max collector-emitter voltage of 45V, max collector current of 0.1A, and min DC current gain of 210 (hFE). This surface-mount transistor operates up to 150 °C and comes in a small outline package shape.
210
P2N2222ARL1G
P2N2222ARL1G by Onsemi is a NPN BJT transistor with max. power dissipation of 0.625W, hFE of 75, and max. collector-emitter voltage of 40V. It is used in amplifier applications due to its high transition frequency of 300MHz and single configuration design for through-hole mounting.
EUROPEAN PART NUMBER
75
285 ns
BC850CLT1G
BC850CLT1G by Onsemi is a NPN BJT transistor with VCEsat of 0.6V, hFE of 420, and fT of 100MHz. It is used in small signal applications due to its low power dissipation (0.3W), high collector-emitter voltage (45V), and compact gull wing package design.
TO-236
.3 W
.6 V
2N5089G
2N5089G by Onsemi is a NPN BJT with max. power dissipation of 1.5W, hFE of 450, and fT of 50MHz. Ideal for amplifier applications due to its max. collector-emitter voltage of 25V and max. collector current of 0.05A in a cylindrical package style.
.05 A
25 V
450
2N6426G
2N6426G by Onsemi is a NPN Darlington BJT with max. power dissipation of 1.5W, hFE of 20000, and VCE of 40V. Ideal for applications requiring high current gain and voltage amplification in through-hole configurations.
DARLINGTON
20000
2N6427RLRAG
2N6427RLRAG by Onsemi is a NPN BJT with 40V VCEO, 0.5A IC, and 14000 hFE. Ideal for applications requiring high DC current gain like amplifiers and drivers due to its Darlington configuration. Package style is cylindrical with through-hole terminals for easy mounting.
14000
2SC4617G
2SC4617G by Onsemi is a NPN BJT transistor with hFE of 120, fT of 180 MHz, and VCE of 50V. Ideal for amplifier applications due to its small outline package style and max power dissipation of 0.125W. Suitable for surface mount designs with Gull Wing terminals.
.125 W
2SC4617T1G
2SC4617T1G by Onsemi is a NPN BJT transistor with hFE of 120, fT of 180 MHz, and VCE of 50V. Ideal for amplifier applications due to its small outline package style and max power dissipation of 0.125W. Suitable for surface mount designs with Gull Wing terminals.
2SC4617T1
The Onsemi 2SC4617T1 is a NPN BJT transistor with hFE of 120, fT of 180 MHz, and VCE of 50V. Ideal for amplifier applications due to its small outline package style and max power dissipation of 0.125W. Suitable for surface mount designs with Gull Wing terminals in a rectangular shape.
e0
235
Tin/Lead (Sn/Pb)
2N3906RLRPG
PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .2 A;
.35 W
2N5089RLRAG
2N5089RLRAG by Onsemi is a NPN BJT transistor with hFE of 400, VCE of 25V, and IC of 0.05A. Ideal for amplifier applications due to its high transition frequency of 50MHz and max power dissipation of 0.35W in a cylindrical package.
LOW NOISE
400
BC847CTT1G
BC847CTT1G by Onsemi is a NPN BJT transistor with a max collector-emitter voltage of 45V and a min DC current gain of 420. It is designed for amplifier applications, featuring a small outline package style and Gull Wing terminal form for surface mount assembly. With a max operating temperature of 150°C, it offers a nominal transition frequency of 100MHz, making it suitable for high-frequency amplification needs.
MMBT2369ALT3G
MMBT2369ALT3G by Onsemi is a NPN BJT transistor for switching applications. It has a max collector-emitter voltage of 15V, max current of 0.2A, and min DC current gain of 20. With a small outline package style, it's ideal for surface mount designs requiring fast switching speeds.
TO-236AB
12 ns
MMBT6517LT1G
MMBT6517LT1G by Onsemi is a NPN BJT transistor with 3 terminals, ideal for switching applications. It has a max collector-emitter voltage of 350V, max collector current of 0.1A, and min DC current gain of 15. This small outline package with Gull Wing terminals operates up to 150 °C and has a transition frequency of 40MHz.
.225 W
MPS2222ARLG
MPS2222ARLG by Onsemi is a NPN BJT transistor with max. collector-emitter voltage of 40V, ideal for switching applications. Features include min. DC current gain of 35 and max. power dissipation of 0.625W in a cylindrical package style. Suitable for through-hole mounting with terminal finish Sn/Ag/Cu.
35
MPS2222ARLRAG
MPS2222ARLRAG by Onsemi is a NPN BJT transistor with 3 terminals, max. power dissipation of 0.625W, and min. DC current gain of 35. Ideal for switching applications, it has a max. collector-emitter voltage of 40V and operates at up to 150°C.
MPS2222ARLRPG
MPS2222ARLRPG by Onsemi is a NPN BJT transistor with max. collector-emitter voltage of 40V and max. collector current of 0.6A. It has a min. DC current gain of 35 and operates at up to 150°C, making it suitable for switching applications in various electronic circuits. With a nominal transition frequency of 300MHz, this through-hole transistor offers fast turn-on/off times for efficient performance.
MPS2369AG
MPS2369AG by Onsemi is a NPN BJT transistor with 3 terminals, ideal for switching applications. It has a max collector-emitter voltage of 15V and max collector current of 0.2A. With a transition frequency of 500MHz, it's suitable for high-speed circuit designs.
.36 W
500 MHz
MPS651RLRMG
MPS651RLRMG by Onsemi is a NPN BJT transistor with 3 terminals, ideal for amplifier applications. It offers a max collector-emitter voltage of 60V, max collector current of 2A, and min DC current gain of 40 (hFE). With a package style of cylindrical and max operating temp of 150 °C, it's suitable for various electronic designs.
75 MHz
MPS6602G
MPS6602G by Onsemi is a NPN BJT transistor with 3 terminals, ideal for amplifier applications. It has a max power dissipation of 0.625W, hFE of 30, and can handle up to 1A collector current. With a max operating temp of 150 °C and fT of 100MHz, it offers reliable performance in various electronic circuits.
55 ns
MPS6651G
MPS6651G by Onsemi is a PNP BJT transistor with 3 terminals, ideal for amplifier applications. It has a max power dissipation of 0.625W, hFE of 30, and max collector current of 1A. With a max operating temp of 150 °C and fT of 100MHz, it offers reliable performance in various electronic circuits.
75 ns
280 ns
MPS6652G
MPS6652G by Onsemi is a PNP BJT transistor with 40V VCEO, 1A IC, and 100MHz fT. Ideal for amplifier applications due to its 0.625W power dissipation and hFE of 30. Packaged in cylindrical shape with through-hole terminals for easy installation.
MPS6652RLRAG
MPS6652RLRAG by Onsemi is a PNP BJT transistor with 40V VCEO, 1A IC, and 100MHz fT. Ideal for amplifier applications due to its 0.625W power dissipation, hFE of 30, and operating temperature up to 150 °C. Packaged in cylindrical shape with through-hole terminals for easy installation.
MPS751G
MPS751G by Onsemi is a PNP BJT transistor with 3 terminals, ideal for amplifier applications. It has a max collector-emitter voltage of 60V, max collector current of 2A, and min DC current gain of 40. The package style is cylindrical with through-hole terminals made of tin silver copper.
MPS751RLRPG
MPS751RLRPG by Onsemi is a PNP BJT transistor with 3 terminals, max. power dissipation of 0.625W, and max. collector-emitter voltage of 60V. Ideal for amplifier applications due to its high transition frequency of 75MHz and max. collector current of 2A in a cylindrical package style.
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