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2SC4617T1G

Onsemi

2SC4617T1G by Onsemi

2SC4617T1G by Onsemi is a NPN BJT transistor with hFE of 120, fT of 180 MHz, and VCE of 50V. Ideal for amplifier applications due to its small outline package style and max power dissipation of 0.125W. Suitable for surface mount designs with Gull Wing terminals.

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PC Components Company LLC

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Overview

Experience superior performance with the Onsemi 2SC4617T1G small signal bipolar junction transistor. Manufactured by Onsemi, a leader in semiconductor technology, this NPN transistor is ideal for amplifier applications. With a high DC current gain and a maximum operating temperature of 150 °C, this transistor offers reliability and efficiency. Its compact design and surface mount capability make it versatile for various electronic projects. Trust Onsemi for quality and innovation in every component.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this transistor a versatile choice for amplifier applications.

Configuration: SINGLE

Simplifies circuit design by using a single transistor in the configuration.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, ensuring optimal performance in this type of circuit.

Surface Mount: YES

Ease of installation and space-saving design for modern electronic applications.

Package Shape: RECTANGULAR

Compact rectangular shape allows for efficient placement on PCBs.

Terminal Form: GULL WING

Gull wing terminals provide secure and reliable connections for the transistor.

No. of Terminals: 3

Simple and straightforward connection with only 3 terminals.

Maximum Power Dissipation (Abs): 0.125 W

Suitable for low-power applications, ensuring efficient operation.

Package Style (Meter): SMALL OUTLINE

Compact and space-saving design ideal for small electronic devices.

Minimum DC Current Gain (hFE): 120

High DC current gain ensures reliable amplification in the circuit.

Maximum Operating Temperature: 150 °C

Can operate efficiently at high temperatures without compromising performance.

Maximum Collector-Emitter Voltage: 50 V

Withstands high collector-emitter voltage, making it suitable for various applications.

Transistor Element Material: SILICON

Silicon material ensures high performance and reliability for the transistor.

Maximum Collector Current (IC): 0.1 A

Sufficient collector current for many small signal applications.

Terminal Finish: TIN

Tin terminal finish provides good conductivity and corrosion resistance.

Terminal Position: DUAL

Dual terminal position allows for flexibility in circuit design.

Maximum Time At Peak Reflow Temperature (s): 30

Optimal reflow temperature for soldering the transistor onto the PCB.

Peak Reflow Temperature °C: 260

Can withstand high peak reflow temperature during manufacturing processes.

Nominal Transition Frequency (fT): 180 MHz

High transition frequency for fast switching and amplification in high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2SC4617T1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

120

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2SC4617T1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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