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MPS2369AG

Onsemi

MPS2369AG by Onsemi

MPS2369AG by Onsemi is a NPN BJT transistor with 3 terminals, ideal for switching applications. It has a max collector-emitter voltage of 15V and max collector current of 0.2A. With a transition frequency of 500MHz, it's suitable for high-speed circuit designs.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Chip Stock

USA . 71,000 parts In-Stock

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Vyrian

USA . 4,230 parts In-Stock

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Digiode

USA . 1,411 parts In-Stock

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AZTECH Wire

Italy . 1,191 parts In-Stock

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Kulean Microsystems

USA . 7,136 parts In-Stock

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SupplyDigital Components

Austria . 6,732 parts In-Stock

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TANS Electronics

Latvia . 6,194 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 2,700 parts In-Stock

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Corphita

USA . 1,476 parts In-Stock

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Corohmni

South Africa . 456 parts In-Stock

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Problanco Electronics

Mexico . 324 parts In-Stock

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UHIMA Technologies

Türkiye . 267 parts In-Stock

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Overview

Enhance your electronic projects with the high-quality MPS2369AG Small Signal Bipolar Junction Transistor from Onsemi. With a focus on reliability and precision, Onsemi is a trusted manufacturer known for delivering top-notch components for various applications. The NPN configuration and switching capabilities of this transistor make it ideal for a wide range of projects. Experience the value and benefits of this product, offering efficient power dissipation, quick turn-on/off times, and a high transition frequency. Upgrade your designs with the MPS2369AG and unlock endless possibilities in the world of electronics.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good insulation properties and is durable, making the transistor suitable for a variety of applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in switching applications, making this transistor versatile for switching circuits.

Configuration: SINGLE

Single configuration simplifies circuit design and ensures ease of implementation in various electronic circuits.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers reliable performance in switching circuits.

Maximum Power Dissipation (Abs): 0.36 W

With a high maximum power dissipation, this transistor can handle power efficiently without risking overheating.

Maximum Collector-Emitter Voltage: 15 V

The high maximum collector-emitter voltage rating allows for use in circuits with varying voltage requirements.

Nominal Transition Frequency (fT): 500 MHz

The high transition frequency indicates the transistor's ability to operate at high frequencies, making it ideal for high-speed switching applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MPS2369AG attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

15 V

Configuration:

Minimum DC Current Gain (hFE):

20

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

18 ns

Maximum Turn On Time (ton):

12 ns

Trade Compliance

MPS2369AG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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