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MPS2222ARLRAG

Onsemi

MPS2222ARLRAG by Onsemi

MPS2222ARLRAG by Onsemi is a NPN BJT transistor with 3 terminals, max. power dissipation of 0.625W, and min. DC current gain of 35. Ideal for switching applications, it has a max. collector-emitter voltage of 40V and operates at up to 150°C.

Median Price

$0.407

Lifecycle Status

Suppliers In-Stock

12

In-Stock Inventory

1k+

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IBS Electronics

USA . 392,240 parts In-Stock

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Bristol Electronics

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Sensible Micro Corp

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Atlantic Semiconductor

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Vyrian

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LWI Electronics Inc

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Euro-Tech

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PC Components Company LLC

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Digiode

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Nova Conductors

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AZTECH Wire

Italy . 383 parts In-Stock

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Ampacity Inc.

Singapore . 625 parts In-Stock

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Component Stockers USA

USA . 334 parts In-Stock

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Kepictronics

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Perfect Parts

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Kulean Microsystems

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A-Z Elektronik GmbH

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Argo Parts USA

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TANS Electronics

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Continental Prestige Electronics

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Problanco Electronics

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UHIMA Technologies

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Bastille Electronics

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Overview

Looking for a reliable Small Signal Bipolar Junction Transistor (BJT)? Look no further than the MPS2222ARLRAG by Onsemi! With a reputation for high-quality manufacturing, Onsemi delivers durable and efficient components for a variety of applications. Whether you need a transistor for switching purposes or other electronic projects, this NPN transistor offers a single configuration with a maximum collector-emitter voltage of 40V and a peak transition frequency of 300 MHz. Trust in Onsemi to provide you with the value and performance you need for your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and heat dissipation, making the transistor durable and reliable.

Polarity or Channel Type: NPN

NPN transistors are commonly used and easy to incorporate into circuit designs.

Configuration: SINGLE

Simplified design with a single configuration for ease of use.

Transistor Application: SWITCHING

Suitable for switching applications, providing fast response times.

Package Shape: ROUND

Compact round shape for easy mounting and space-saving in PCB designs.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide a reliable connection for soldering onto PCBs.

No. of Terminals: 3

Simple 3-terminal design for easy integration into circuit layouts.

Maximum Power Dissipation (Abs): 0.625 W

Can handle relatively high power dissipation, suitable for many applications.

Package Style (Meter): CYLINDRICAL

Cylindrical package style for easy handling and mounting in circuits.

Minimum DC Current Gain (hFE): 35

Relatively high DC current gain ensures stable and reliable amplification.

Maximum Operating Temperature: 150 °C

Can operate at high temperatures without performance degradation.

Maximum Collector-Emitter Voltage: 40 V

Can handle medium voltage levels in circuits without breakdown.

Transistor Element Material: SILICON

Silicon material for the transistor element provides good performance and durability.

Maximum Turn On Time (ton): 35 ns

Fast turn-on time for quick response in switching applications.

Maximum Collector Current (IC): 0.6 A

Can handle relatively high collector current for various applications.

Maximum Turn Off Time (toff): 285 ns

Fast turn-off time for efficient switching operations.

Terminal Finish: Tin/Silver/Copper (Sn/Ag/Cu)

Tin/silver/copper terminal finish for good conductivity and corrosion resistance.

Terminal Position: BOTTOM

Bottom terminal position for easy connection and mounting onto PCBs.

Maximum Time At Peak Reflow Temperature (s): 40

Can withstand peak reflow temperatures for soldering processes.

Peak Reflow Temperature °C: 260

Peak reflow temperature of 260C for reliable soldering and bonding.

Nominal Transition Frequency (fT): 300 MHz

High transition frequency for fast signal processing and amplification.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MPS2222ARLRAG attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

40 V

Configuration:

Minimum DC Current Gain (hFE):

35

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

Tin/Silver/Copper (Sn/Ag/Cu)

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

40

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

285 ns

Maximum Turn On Time (ton):

35 ns

Trade Compliance

MPS2222ARLRAG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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