Loading...

MPS2222ARLG

Onsemi

MPS2222ARLG by Onsemi

MPS2222ARLG by Onsemi is a NPN BJT transistor with max. collector-emitter voltage of 40V, ideal for switching applications. Features include min. DC current gain of 35 and max. power dissipation of 0.625W in a cylindrical package style. Suitable for through-hole mounting with terminal finish Sn/Ag/Cu.

Median Price

-

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

ComSIT Distribution GmbH

Germany . 23,740 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

23,740

-

-

-

-

R&J Components

USA . 8,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

8,000

-

-

-

-

Vyrian

USA . 5,951 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,951

-

-

-

-

Bristol Electronics

USA . 2,520 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,520

-

-

-

-

Atlantic Semiconductor

USA . 2,520 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,520

-

-

-

-

Digiode

USA . 1,966 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,966

-

-

-

-

LWI Electronics Inc

India . 490 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

490

-

-

-

-

Q Components

USA . 75 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

75

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

AZTECH Wire

Italy . 119 parts In-Stock

1+ parts

$9.040

100+ parts

-

1k+ parts

-

10k+ parts

-

119

$9.040

-

-

-

Perfect Parts

USA . 27,054 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

27,054

-

-

-

-

QUARKTWIN TECHNOLOGY LTD

USA . 7,715 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

7,715

-

-

-

-

SupplyDigital Components

Austria . 6,937 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,937

-

-

-

-

Kulean Microsystems

USA . 6,128 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,128

-

-

-

-

Problanco Electronics

Mexico . 3,915 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,915

-

-

-

-

TANS Electronics

Latvia . 1,661 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,661

-

-

-

-

UHIMA Technologies

Türkiye . 965 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

965

-

-

-

-

Corohmni

South Africa . 332 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

332

-

-

-

-

Corphita

USA . 228 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

228

-

-

-

-

Overview

Enhance your electronic designs with the MPS2222ARLG from Onsemi, a high-quality NPN Small Signal Bipolar Junction Transistor. Manufactured by Onsemi, this transistor offers reliable performance in switching applications with a maximum collector-emitter voltage of 40V and a minimum DC current gain of 35. Its through-hole terminal form ensures easy installation, while its compact cylindrical package shape saves space on your PCB. Trust Onsemi's reputation for excellence in semiconductor manufacturing and unlock the potential of your projects with the MPS2222ARLG.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This makes the transistor lightweight and durable, perfect for portable or rugged applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, making this transistor versatile.

Configuration: SINGLE

SINGLE configuration simplifies circuit design and makes it easier to integrate into electronic devices.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient and reliable performance in such scenarios.

Package Shape: ROUND

ROUND shape allows for easy mounting and placement in circular layouts or designs.

Maximum Power Dissipation (Abs): 0.625 W

With a high power dissipation capability, this transistor can handle more power without overheating.

Minimum DC Current Gain (hFE): 35

A minimum DC current gain of 35 ensures good amplification characteristics in various circuit configurations.

Maximum Operating Temperature: 150 °C

Operating at temperatures up to 150 °C allows for use in high-temperature environments without performance degradation.

Maximum Collector-Emitter Voltage: 40 V

A high maximum collector-emitter voltage rating of 40V enables this transistor to handle higher voltage applications.

Nominal Transition Frequency (fT): 300 MHz

A high nominal transition frequency of 300 MHz indicates fast switching speeds, ideal for high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MPS2222ARLG attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

EUROPEAN PART NUMBER

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

40 V

Configuration:

Minimum DC Current Gain (hFE):

35

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

Tin/Silver/Copper (Sn/Ag/Cu)

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

40

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

285 ns

Maximum Turn On Time (ton):

35 ns

Trade Compliance

MPS2222ARLG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20