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MPS2222AG

Onsemi

MPS2222AG by Onsemi

MPS2222AG by Onsemi is a NPN BJT transistor with a max collector-emitter voltage of 40V and max current of 0.6A, ideal for switching applications. It has a min DC current gain of 35 and operates up to 150°C, featuring a transition frequency of 300MHz. The package style is cylindrical with through-hole terminals in plastic/epoxy material.

Median Price

$0.786

Lifecycle Status

Suppliers In-Stock

13

In-Stock Inventory

1k+

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Nova Conductors

Japan . 750 parts In-Stock

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$0.033

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750

$0.033

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Component Electronics Inc.

Canada . 48 parts In-Stock

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$1.540

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$1.150

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$1.000

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48

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Chip Stock

USA . 4,000 parts In-Stock

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Digiode

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Semtec, LLC

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Holdelec - ElecDif-Pro

France . 600 parts In-Stock

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Vyrian

USA . 554 parts In-Stock

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Sensible Micro Corp

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Rebound Electronics

UK . 319 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 203 parts In-Stock

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ComSIT Distribution GmbH

Germany . 170 parts In-Stock

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LIBRA Elektronik GmbH

Germany . 106 parts In-Stock

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Prism Electronics

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Corohmni

South Africa . 460 parts In-Stock

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$0.032

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460

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Argo Parts USA

USA . 8,760 parts In-Stock

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$0.033

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Continental Prestige Electronics

USA . 6,160 parts In-Stock

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$0.033

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Netroflash

USA . 2,000 parts In-Stock

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$0.033

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$0.031

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$0.031

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$0.033

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$0.031

$0.031

Bastille Electronics

Australia . 800 parts In-Stock

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$0.033

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$0.031

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$0.030

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$0.029

800

$0.033

$0.031

$0.030

$0.029

AZTECH Wire

Italy . 1,195 parts In-Stock

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$12.368

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Ampacity Inc.

Singapore . 409 parts In-Stock

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$52.050

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409

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Perfect Parts

USA . 29,767 parts In-Stock

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Kepictronics

USA . 25,608 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 19,537 parts In-Stock

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Metaverse IC Inc.

Canada . 8,000 parts In-Stock

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A-Z Elektronik GmbH

Germany . 7,115 parts In-Stock

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Kulean Microsystems

USA . 6,743 parts In-Stock

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Problanco Electronics

Mexico . 6,723 parts In-Stock

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TANS Electronics

Latvia . 4,978 parts In-Stock

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Benley Electronics

USA . 4,650 parts In-Stock

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Authorized Procurement Solutions

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SupplyDigital Components

Austria . 3,994 parts In-Stock

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Corphita

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Lixinc

USA . 1,352 parts In-Stock

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UHIMA Technologies

Türkiye . 350 parts In-Stock

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Cyclops Electronics Ltd (Excess)

UK . 203 parts In-Stock

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Glotronic Ltd.

UK . 162 parts In-Stock

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Overview

Looking for a reliable Small Signal Bipolar Junction Transistor (BJT) for your switching applications? Look no further than the Onsemi MPS2222AG. With its high-quality construction and NPN configuration, this transistor offers excellent performance and reliability. Whether you're working on a DIY project or a professional application, this transistor is sure to meet your needs. Trust in Onsemi's reputation for excellence and get your hands on the MPS2222AG today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, ensuring a longer lifespan for the transistor.

Polarity or Channel Type: NPN

NPN transistors are commonly used in switching applications and offer high performance and reliability.

Configuration: SINGLE

Simplifies the circuit design as only one transistor is required, making the overall system more compact and cost-effective.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient and reliable operation in a variety of electronic circuits.

Maximum Power Dissipation (Abs): 0.625 W

Can handle moderate power levels without overheating, making it suitable for a wide range of applications.

Package Shape: ROUND

The round package shape allows for easy mounting and ensures mechanical stability in the circuit.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide a strong and reliable connection to the circuit board, improving overall performance and longevity.

No. of Terminals: 3

Three terminals offer flexibility in circuit connections, allowing for a variety of configurations and applications.

Maximum Operating Temperature: 150 °C

Can operate efficiently in high temperature environments, ensuring reliable performance in demanding conditions.

Maximum Collector-Emitter Voltage: 40 V

Can handle high voltage levels, making it suitable for a wide range of applications with varying voltage requirements.

Minimum DC Current Gain (hFE): 35

High DC current gain ensures efficient amplification of signals, improving overall performance in amplification circuits.

Transistor Element Material: SILICON

Silicon is a popular material for transistors due to its high efficiency and reliability, ensuring stable performance over time.

Nominal Transition Frequency (fT): 300 MHz

High transition frequency allows for fast switching speeds, making it ideal for high-frequency applications such as RF amplification.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MPS2222AG attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

40 V

Configuration:

Minimum DC Current Gain (hFE):

35

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

Tin/Silver/Copper (Sn/Ag/Cu)

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

40

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

285 ns

Maximum Turn On Time (ton):

35 ns

Trade Compliance

MPS2222AG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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