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MPS2222ARLRA

Onsemi

MPS2222ARLRA by Onsemi

MPS2222ARLRA by Onsemi is a NPN BJT transistor with max. collector-emitter voltage of 40V, ideal for switching applications. It has a min. DC current gain of 35 and max. operating temp of 150°C. With a package style of cylindrical, it offers fast turn on/off times (ton: 35ns, toff: 285ns) and nominal transition frequency of 300MHz.

Median Price

$0.338

Lifecycle Status

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24

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1k+

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Master Electronics

USA . 391,740 parts In-Stock

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$0.290

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$0.260

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Verical

USA . 391,650 parts In-Stock

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$0.387

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$0.348

391,650

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$0.387

$0.348

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TEDSS.com

USA . 9,690 parts In-Stock

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$0.120

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$0.076

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9,690

$0.120

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$0.076

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Ace Electronics

USA . 1,900 parts In-Stock

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Vyrian

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Chip Stock

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Bristol Electronics

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Flex Direct, LLC

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EMSNET

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Inventory MP

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Semi Source

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Inland Empire Components Inc.

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Sogenti Electronics

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PC Components Company LLC

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Digiode

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Sensible Micro Corp

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R&J Components

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Odintec Ltd.

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Whistler Technology

UK . 890 parts In-Stock

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Lantek

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Resion

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Mil-Aero Solutions, Inc.

USA . 712 parts In-Stock

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Nova Conductors

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Classic Components Corporation

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Corohmni

South Africa . 245 parts In-Stock

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Ampacity Inc.

Singapore . 392,548 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 24,334 parts In-Stock

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SupplyDigital Components

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TANS Electronics

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Problanco Electronics

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Authorized Procurement Solutions

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Perfect Parts

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Kulean Microsystems

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Metaverse IC Inc.

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GreenTree Electronics

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UHIMA Technologies

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Overview

Discover the MPS2222ARLRA by Onsemi, a top-quality Small Signal Bipolar Junction Transistor that guarantees outstanding performance and reliability. Manufactured by Onsemi, a renowned leader in semiconductor technology, this NPN transistor is ideal for switching applications due to its high DC current gain and low power dissipation. With a maximum collector-emitter voltage of 40V and a transition frequency of 300MHz, this transistor offers unmatched value and benefits to customers looking for efficient and effective electronic solutions. Upgrade your projects with the MPS2222ARLRA and experience enhanced performance like never before!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring a longer lifespan.

Polarity or Channel Type: NPN

Commonly used in switching applications, making it versatile for various electronic circuits.

Configuration: SINGLE

Simplifies circuit design by requiring only one transistor for operation.

Transistor Application: SWITCHING

Designed for fast switching speeds, suitable for applications requiring rapid on/off transitions.

Maximum Power Dissipation (Abs): 0.625 W

Able to handle moderate power levels, suitable for low to medium power applications.

Package Shape: ROUND

Easy to mount and solder onto circuit boards, facilitating installation.

Terminal Form: THROUGH-HOLE

Allows for easy manual soldering, making it ideal for hobbyists and prototyping.

No. of Terminals: 3

Simplified pin configuration for straightforward circuit connections.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures, ensuring reliable performance in harsh environments.

Maximum Collector-Emitter Voltage: 40 V

Suitable for low voltage applications, providing a wide operating voltage range.

Transistor Element Material: SILICON

Offers high reliability and performance, commonly used in electronic devices.

Nominal Transition Frequency (fT): 300 MHz

Capable of operating at high frequencies, suitable for radio frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MPS2222ARLRA attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

40 V

Configuration:

Minimum DC Current Gain (hFE):

35

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

285 ns

Maximum Turn On Time (ton):

35 ns

Trade Compliance

MPS2222ARLRA Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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