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MPS2222ARLRM

Onsemi

MPS2222ARLRM by Onsemi

MPS2222ARLRM by Onsemi is a NPN BJT transistor with max. power dissipation of 0.625W, hFE of 35, and max. collector-emitter voltage of 40V. Ideal for switching applications due to its fast turn on/off times (ton: 35ns, toff: 285ns) and high transition frequency (fT: 300MHz).

Median Price

$0.035

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

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Rochester

USA . 8,800 parts In-Stock

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$0.030

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$0.025

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$0.023

8,800

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$0.030

$0.025

$0.023

DigiKey

USA . 8,800 parts In-Stock

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$0.040

8,800

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$0.040

Distributors (In-Stock)

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Digiode

USA . 332 parts In-Stock

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$0.024

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332

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Vyrian

USA . 1,224 parts In-Stock

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DigiKey Marketplace

USA . 10,800 parts In-Stock

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PC Components Company LLC

USA . 1,973 parts In-Stock

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Bristol Electronics

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R&J Components

USA . 1,206 parts In-Stock

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Corphita

USA . 51 parts In-Stock

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$0.022

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51

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Corohmni

South Africa . 186 parts In-Stock

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Continental Prestige Electronics

USA . 26,000 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 10,649 parts In-Stock

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SupplyDigital Components

Austria . 7,990 parts In-Stock

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Kulean Microsystems

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Authorized Procurement Solutions

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Perfect Parts

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UHIMA Technologies

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TANS Electronics

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Problanco Electronics

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Overview

Experience the superior quality and reliability of Onsemi with the MPS2222ARLRM Small Signal Bipolar Junction Transistor. This NPN transistor is perfect for switching applications, offering a maximum collector-emitter voltage of 40V and a peak reflow temperature of 235°C. With a minimum DC current gain of 35 and a maximum operating temperature of 150°C, this transistor provides exceptional performance and durability. Trust Onsemi to deliver cutting-edge technology that meets your needs. Upgrade your electronic projects with the MPS2222ARLRM today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring long-lasting performance.

Polarity or Channel Type: NPN

Allows for easy integration into NPN circuits, making it versatile for a variety of applications.

Configuration: SINGLE

Simplified setup and operation, ideal for straightforward switching tasks.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient performance in these scenarios.

Package Shape: ROUND

Compact design with no sharp edges, making it easy to handle and install.

Terminal Form: THROUGH-HOLE

Suitable for through-hole soldering, ensuring secure connections for reliable operation.

No. of Terminals: 3

Simple and straightforward terminal configuration for easy installation.

Maximum Power Dissipation (Abs): 0.625 W

Can handle up to 0.625 watts of power, suitable for various low-power applications.

Package Style (Meter): CYLINDRICAL

Cylindrical design offers efficient heat dissipation and easy mounting in compact spaces.

Minimum DC Current Gain (hFE): 35

Stable and reliable minimum current gain ensures consistent performance in various conditions.

Maximum Operating Temperature: 150 °C

Can operate at temperatures up to 150°C, suitable for a wide range of environments.

Maximum Collector-Emitter Voltage: 40 V

Handles up to 40 volts, making it suitable for applications with moderate voltage requirements.

Transistor Element Material: SILICON

Uses silicon as the base material, offering high efficiency and reliability in operation.

Maximum Turn On Time (ton): 35 ns

Fast turn-on time of 35 nanoseconds ensures quick response in switching operations.

Maximum Collector Current (IC): 0.6 A

Can handle up to 0.6 amps of collector current, suitable for many low-power applications.

Maximum Turn Off Time (toff): 285 ns

Efficient turn-off time of 285 nanoseconds for rapid switching operations.

Terminal Finish: TIN LEAD

Tin-lead finish provides reliable solder connections for consistent performance.

Terminal Position: BOTTOM

Bottom terminal position makes it easy to mount and connect in various electronic circuits.

Peak Reflow Temperature °C: 235

Can withstand peak reflow temperatures up to 235°C, ensuring durability during assembly.

Nominal Transition Frequency (fT): 300 MHz

High nominal transition frequency of 300 MHz allows for fast switching speeds in high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MPS2222ARLRM attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

40 V

Configuration:

Minimum DC Current Gain (hFE):

35

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

285 ns

Maximum Turn On Time (ton):

35 ns

Trade Compliance

MPS2222ARLRM Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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