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MPS2222ARLRP

Onsemi

MPS2222ARLRP by Onsemi

MPS2222ARLRP by Onsemi is a NPN BJT transistor with 3 terminals, ideal for switching applications. It has a max collector-emitter voltage of 40V, max collector current of 0.6A, and min DC current gain of 35. With a package style of cylindrical and peak reflow temp of 235 °C, it operates at up to 150°C.

Median Price

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Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

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ABC Electronics Ltd.

UK . 5,550 parts In-Stock

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Speed Components Ltd

Israel . 4,400 parts In-Stock

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Odintec Ltd.

Israel . 1,920 parts In-Stock

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Digiode

USA . 1,689 parts In-Stock

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Greenchips

USA . 942 parts In-Stock

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SIE Connect GmbH - GreenChips

Germany . 942 parts In-Stock

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Vyrian

USA . 407 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 21,232 parts In-Stock

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SupplyDigital Components

Austria . 7,167 parts In-Stock

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Problanco Electronics

Mexico . 7,030 parts In-Stock

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TANS Electronics

Latvia . 3,118 parts In-Stock

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Corphita

USA . 2,299 parts In-Stock

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Kulean Microsystems

USA . 1,814 parts In-Stock

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UHIMA Technologies

Türkiye . 701 parts In-Stock

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Corohmni

South Africa . 274 parts In-Stock

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Overview

Enhance the performance of your electronic devices with the MPS2222ARLRP by Onsemi. As a leading manufacturer in the industry, Onsemi ensures top-notch quality and reliability in their Small Signal Bipolar Junction Transistors (BJTs). Ideal for switching applications, this NPN transistor offers a multitude of benefits, from its high power dissipation to its fast turn on/off times. Whether you're a hobbyist or a professional, this product delivers exceptional value and performance, making it a must-have component for your projects. Upgrade your electronics with the MPS2222ARLRP and experience the difference today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides durability and protection for the transistor, making it suitable for various environments and applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, offering high efficiency and low noise performance.

Configuration: SINGLE

Single configuration simplifies circuit design and implementation, making the transistor easy to use for various applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring fast and efficient operation in various electronic circuits.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this transistor can withstand heat and operate reliably in demanding conditions.

Maximum Collector-Emitter Voltage: 40 V

With a high maximum voltage rating, this transistor can handle higher voltage levels without breakdown, increasing its versatility in different circuits.

Maximum Collector Current (IC): 0.6 A

Capable of handling up to 0.6A of current, this transistor is suitable for low to medium power applications where higher current levels are not required.

Nominal Transition Frequency (fT): 300 MHz

With a high transition frequency, this transistor can operate at high frequencies, making it ideal for applications requiring fast switching speeds.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MPS2222ARLRP attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

40 V

Configuration:

Minimum DC Current Gain (hFE):

35

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

285 ns

Maximum Turn On Time (ton):

35 ns

Trade Compliance

MPS2222ARLRP Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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