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MPS2222ARL1

Onsemi

MPS2222ARL1 by Onsemi

MPS2222ARL1 by Onsemi is a NPN BJT transistor with hFE of 75, Vce of 40V, and fT of 300MHz. Ideal for switching applications due to its fast turn-on time (35ns) and low collector current (0.6A). Packaged in cylindrical shape with through-hole terminals for easy installation.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

< 1k

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Digiode

USA . 623 parts In-Stock

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Vyrian

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SupplyDigital Components

Austria . 6,004 parts In-Stock

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TANS Electronics

Latvia . 2,886 parts In-Stock

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Problanco Electronics

Mexico . 2,112 parts In-Stock

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Kulean Microsystems

USA . 1,713 parts In-Stock

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UHIMA Technologies

Türkiye . 507 parts In-Stock

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Corphita

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Corohmni

South Africa . 392 parts In-Stock

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Overview

Enhance your electronic projects with the high-quality MPS2222ARL1 by Onsemi. As a leading manufacturer in the industry, Onsemi delivers reliable and efficient Small Signal Bipolar Junction Transistors for various applications. With its NPN configuration and switching capabilities, this transistor offers exceptional value and performance. Whether you're looking to amplify signals or control currents, the MPS2222ARL1 is the perfect choice. Trust Onsemi to provide top-notch components that guarantee superior results in your designs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy package makes the transistor durable and resistant to physical damage, ensuring a longer lifespan.

Polarity or Channel Type: NPN

NPN transistors are commonly used for general purpose amplification and switching applications, providing versatility.

Configuration: SINGLE

Single configuration simplifies circuit design and makes it easier to handle the transistor during assembly.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient performance in such scenarios.

Package Shape: ROUND

Round package shape allows for easy mounting and provides mechanical stability in various applications.

Terminal Form: THROUGH-HOLE

Through-hole terminals facilitate easy and secure soldering on PCBs, ensuring reliable connections.

No. of Terminals: 3

Three terminals provide the necessary connections for proper operation and easy integration into circuits.

Package Style (Meter): CYLINDRICAL

Cylindrical package style helps in efficient heat dissipation, ensuring stable operation even at high temperatures.

Minimum DC Current Gain (hFE): 75

High DC current gain ensures that small input signals can control larger output currents effectively.

Maximum Operating Temperature: 150 °C

High maximum operating temperature allows the transistor to function reliably in a wide range of environments.

Maximum Collector-Emitter Voltage: 40 V

High maximum collector-emitter voltage rating ensures compatibility with various circuits and applications.

Transistor Element Material: SILICON

Silicon material provides high reliability, efficiency, and performance in small signal switching applications.

Maximum Turn On Time (ton): 35 ns

Fast turn-on time ensures quick response in switching applications, improving overall performance.

Maximum Collector Current (IC): 0.6 A

High maximum collector current allows the transistor to handle larger current loads without overheating or damage.

Maximum Turn Off Time (toff): 285 ns

Moderate turn-off time ensures controlled switching and reduces the chances of voltage spikes or overshoot.

Terminal Finish: TIN LEAD

Tin lead terminal finish provides good solderability, making it easier to integrate the transistor into PCBs accurately.

Terminal Position: BOTTOM

Bottom terminal position facilitates easy PCB layout and soldering, improving overall assembly efficiency.

Nominal Transition Frequency (fT): 300 MHz

High nominal transition frequency allows the transistor to operate effectively in high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MPS2222ARL1 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

EUROPEAN PART NUMBER

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

40 V

Configuration:

Minimum DC Current Gain (hFE):

75

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

285 ns

Maximum Turn On Time (ton):

35 ns

Trade Compliance

MPS2222ARL1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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