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MPS2222G

Onsemi

MPS2222G by Onsemi

MPS2222G by Onsemi is a NPN BJT transistor with a max collector-emitter voltage of 30V and max current of 0.6A. With a min hFE of 30, it's ideal for switching applications at up to 150°C operating temperature. This through-hole transistor in cylindrical package suits small signal requirements.

Median Price

$0.180

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 51,541 parts In-Stock

1+ parts

-

100+ parts

$0.159

1k+ parts

$0.132

10k+ parts

$0.117

51,541

-

$0.159

$0.132

$0.117

DigiKey

USA . 51,541 parts In-Stock

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-

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-

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10k+ parts

$0.200

51,541

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-

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$0.200

Distributors (In-Stock)

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Digiode

USA . 307 parts In-Stock

1+ parts

$0.124

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-

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307

$0.124

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Vyrian

USA . 1,398 parts In-Stock

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$0.130

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1,398

$0.130

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TEDSS.com

USA . 36,381 parts In-Stock

1+ parts

$0.190

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$0.116

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36,381

$0.190

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$0.116

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DigiKey Marketplace

USA . 66,351 parts In-Stock

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66,351

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Distributors (Availability)

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Corphita

USA . 346 parts In-Stock

1+ parts

$0.117

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-

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346

$0.117

-

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Component Stockers USA

USA . 42,416 parts In-Stock

1+ parts

$0.130

100+ parts

$0.120

1k+ parts

$0.110

10k+ parts

$0.110

42,416

$0.130

$0.120

$0.110

$0.110

Corohmni

South Africa . 202 parts In-Stock

1+ parts

$0.130

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202

$0.130

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Continental Prestige Electronics

USA . 66,249 parts In-Stock

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$0.117

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66,249

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Perfect Parts

USA . 52,279 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 13,245 parts In-Stock

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TANS Electronics

Latvia . 8,207 parts In-Stock

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Problanco Electronics

Mexico . 5,360 parts In-Stock

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SupplyDigital Components

Austria . 4,445 parts In-Stock

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Authorized Procurement Solutions

USA . 4,094 parts In-Stock

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GreenTree Electronics

Israel . 3,984 parts In-Stock

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Kulean Microsystems

USA . 1,641 parts In-Stock

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UHIMA Technologies

Türkiye . 567 parts In-Stock

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567

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Overview

Unlock the power of innovation with the MPS2222G by Onsemi. As a leading manufacturer in small signal bipolar junction transistors, Onsemi delivers quality and reliability with every product. The NPN configuration and switching application make this transistor ideal for a wide range of electronic devices. From amplifiers to power supplies, this product offers customers exceptional value, efficiency, and performance. Experience the advantages of Onsemi's cutting-edge technology with the MPS2222G.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight material, suitable for a variety of applications.

Polarity or Channel Type: NPN

NPN configuration allows for easy integration into circuits.

Configuration: SINGLE

Simplifies circuit design and implementation.

Transistor Application: SWITCHING

Suitable for switching applications with fast response times.

Package Shape: ROUND

Compact shape for efficient use of space on a circuit board.

Maximum Power Dissipation (Abs): 0.625 W

Can handle moderate power levels without overheating.

Minimum DC Current Gain (hFE): 30

Provides consistent and reliable amplification in circuits.

Maximum Operating Temperature: 150 °C

Can withstand high temperature environments.

Maximum Collector-Emitter Voltage: 30 V

Suitable for low voltage circuit applications.

Transistor Element Material: SILICON

High performance material known for its reliability and efficiency.

Maximum Collector Current (IC): 0.6 A

Capable of handling moderate current levels in circuits.

Terminal Finish: Tin/Silver/Copper (Sn/Ag/Cu)

Provides good electrical conductivity and corrosion resistance.

Nominal Transition Frequency (fT): 250 MHz

High frequency operation for fast signal switching.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MPS2222G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

30 V

Configuration:

Minimum DC Current Gain (hFE):

30

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

Tin/Silver/Copper (Sn/Ag/Cu)

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

40

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MPS2222G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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