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MPS2222ARL

Onsemi

MPS2222ARL by Onsemi

MPS2222ARL by Onsemi is a NPN BJT transistor with max. collector-emitter voltage of 40V, ideal for switching applications. It has a min. DC current gain of 35 and max. operating temp of 150 °C. With a peak reflow temp of 235°C, it offers fast turn on/off times (ton: 35ns, toff: 285ns) and high transition frequency (fT: 300MHz).

Median Price

$0.053

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

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Rochester

USA . 1,530 parts In-Stock

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$0.053

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$0.044

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$0.039

1,530

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$0.053

$0.044

$0.039

Distributors (In-Stock)

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Digiode

USA . 1,570 parts In-Stock

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$0.041

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Vyrian

USA . 555 parts In-Stock

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$0.043

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555

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ComSIT Distribution GmbH

Germany . 1,000 parts In-Stock

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Bristol Electronics

USA . 702 parts In-Stock

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702

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Corphita

USA . 372 parts In-Stock

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$0.039

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Corohmni

South Africa . 124 parts In-Stock

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$0.043

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Component Stockers USA

USA . 1,556 parts In-Stock

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$0.050

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$0.040

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$0.040

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QUARKTWIN TECHNOLOGY LTD

USA . 18,537 parts In-Stock

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Problanco Electronics

Mexico . 5,594 parts In-Stock

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TANS Electronics

Latvia . 3,255 parts In-Stock

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Kulean Microsystems

USA . 1,578 parts In-Stock

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SupplyDigital Components

Austria . 968 parts In-Stock

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UHIMA Technologies

Türkiye . 419 parts In-Stock

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Overview

Experience the superior quality and reliability of Onsemi's MPS2222ARL small signal bipolar junction transistor. Ideal for switching applications, this NPN transistor offers a maximum collector-emitter voltage of 40V and a minimum DC current gain of 35. The cylindrical package body material ensures durability while the terminal form allows for easy installation. With a maximum power dissipation of 0.625W and a nominal transition frequency of 300 MHz, this transistor provides exceptional performance in various electronic circuits. Upgrade your designs with the value and benefits this high-quality component brings to your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material combination provides good protection for the components inside, ensuring durability and longevity of the transistor.

Polarity or Channel Type: NPN

NPN transistors are commonly used in various electronic circuits due to their high efficiency and versatility.

Configuration: SINGLE

Single configuration simplifies circuit design and makes it easier to integrate this transistor into different applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers reliable and fast switching performance.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure connections during soldering, ensuring stability and reliability in the circuit.

Maximum Power Dissipation (Abs): 0.625 W

With a maximum power dissipation of 0.625W, this transistor can handle moderate power levels efficiently.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature of 150 °C allows this transistor to be used in a wide range of environments.

Maximum Collector-Emitter Voltage: 40 V

The maximum collector-emitter voltage of 40V ensures reliable performance in different voltage applications.

Maximum Collector Current (IC): 0.6 A

With a maximum collector current of 0.6A, this transistor can handle moderate current levels, making it suitable for various circuit designs.

Nominal Transition Frequency (fT): 300 MHz

The high nominal transition frequency of 300MHz allows for fast signal switching and high-speed operation in electronic circuits.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MPS2222ARL attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

EUROPEAN PART NUMBER

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

40 V

Configuration:

Minimum DC Current Gain (hFE):

35

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

285 ns

Maximum Turn On Time (ton):

35 ns

Trade Compliance

MPS2222ARL Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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