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MPS2222ACRLRP

Onsemi

MPS2222ACRLRP by Onsemi

MPS2222ACRLRP by Onsemi is a NPN BJT transistor with 3 terminals and max. power dissipation of 0.625W. It has a min. DC current gain of 35, max. operating temp of 150 °C, and max. collector-emitter voltage of 40V. Ideal for switching applications due to its fast turn on/off times (ton: 35ns, toff: 285ns) and high transition frequency (fT: 300MHz).

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1k+

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Digiode

USA . 1,868 parts In-Stock

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SupplyDigital Components

Austria . 7,952 parts In-Stock

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TANS Electronics

Latvia . 3,022 parts In-Stock

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Kulean Microsystems

USA . 2,424 parts In-Stock

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Problanco Electronics

Mexico . 1,233 parts In-Stock

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UHIMA Technologies

Türkiye . 722 parts In-Stock

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Corphita

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Corohmni

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Overview

Upgrade your electronic devices with the high-quality MPS2222ACRLRP small signal bipolar junction transistor by Onsemi. Designed for applications such as switching, this NPN transistor offers reliable performance and durability. With a maximum collector-emitter voltage of 40V and a maximum operating temperature of 150 °C, this transistor is perfect for a wide range of projects. Trust in the expertise of Onsemi to provide you with top-notch components that will take your creations to the next level. Experience the value and benefits of the MPS2222ACRLRP today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring a longer lifespan.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, making this transistor versatile in various applications.

Configuration: SINGLE

Simplified circuit design with single configuration for easier integration.

Transistor Application: SWITCHING

Suitable for switching applications due to its fast turn on and turn off times.

Package Shape: ROUND

Unique round package shape for easy mounting and handling.

No. of Terminals: 3

Simple three-terminal configuration for straightforward connections in circuits.

Maximum Power Dissipation (Abs): 0.625 W

Can handle high power dissipation levels, making it reliable for demanding applications.

Maximum Operating Temperature: 150 °C

Wide operating temperature range allows for use in various environmental conditions.

Maximum Collector-Emitter Voltage: 40 V

Can withstand high collector-emitter voltages, suitable for different voltage levels in circuits.

Transistor Element Material: SILICON

Silicon material ensures reliable performance and stability in the transistor.

Maximum Turn On Time (ton): 35 ns

Fast turn on time for quick response in switching applications.

Maximum Collector Current (IC): 0.6 A

Able to handle high collector currents, making it suitable for various load requirements.

Maximum Turn Off Time (toff): 285 ns

Fast turn off time ensures efficient switching and minimal delay.

Terminal Finish: TIN LEAD

Tin lead finish for reliable electrical connections and soldering.

Terminal Position: BOTTOM

Bottom terminal position for easy mounting and integration in circuit boards.

Peak Reflow Temperature °C: 235

Can withstand high reflow temperatures during soldering processes.

Nominal Transition Frequency (fT): 300 MHz

High transition frequency for efficient amplification and signal processing.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MPS2222ACRLRP attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

40 V

Configuration:

Minimum DC Current Gain (hFE):

35

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

285 ns

Maximum Turn On Time (ton):

35 ns

Trade Compliance

MPS2222ACRLRP Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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