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MPS2222

Onsemi

MPS2222 by Onsemi

MPS2222 by Onsemi is a NPN BJT transistor with max. power dissipation of 0.625W and max. collector-emitter voltage of 30V, ideal for switching applications. With a min. DC current gain of 30 and max. operating temp of 150 °C, it offers reliable performance in various electronic circuits requiring low-power amplification or signal switching capabilities.

Median Price

$0.303

Lifecycle Status

Suppliers In-Stock

27

In-Stock Inventory

1k+

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Master Electronics

USA . 19,042 parts In-Stock

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$0.260

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$0.140

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Verical

USA . 18,980 parts In-Stock

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$0.346

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$0.242

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$0.346

$0.242

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Vyrian

USA . 1,048 parts In-Stock

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$0.260

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$0.260

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Component Electronics Inc.

Canada . 13 parts In-Stock

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$0.380

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$0.290

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$0.250

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13

$0.380

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American Microsemiconductor Inc.

USA . 43 parts In-Stock

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$0.980

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43

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R&J Components

USA . 36,433 parts In-Stock

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IBS Electronics

USA . 19,042 parts In-Stock

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$0.365

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$0.196

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$0.196

TME

Poland . 8,490 parts In-Stock

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$0.028

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$0.025

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$0.022

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Electronic Expediters

USA . 5,459 parts In-Stock

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EMSNET

USA . 4,988 parts In-Stock

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DF Sales Co.

USA . 3,450 parts In-Stock

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DF Sales Co.

USA . 3,450 parts In-Stock

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Bristol Electronics

USA . 2,794 parts In-Stock

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Inventory MP

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Digiode

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Resion

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NAC Semi

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Prism Electronics

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ECAB

Sweden . 620 parts In-Stock

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Mil-Aero Solutions, Inc.

USA . 393 parts In-Stock

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MISTER SPROCKETS

USA . 183 parts In-Stock

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Mentor Electronics Marketing, LLC

USA . 100 parts In-Stock

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Sunrise Surplus Inc.

USA . 48 parts In-Stock

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A2Z Electronics, Inc.

USA . 25 parts In-Stock

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Odintec Ltd.

Israel . 22 parts In-Stock

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Electronics Depot

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ACDS - Activité Composants Distribution Service

France . 4 parts In-Stock

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Corohmni

South Africa . 403 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 21,617 parts In-Stock

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Problanco Electronics

Mexico . 6,109 parts In-Stock

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Authorized Procurement Solutions

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Assy Fe

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Kulean Microsystems

USA . 2,148 parts In-Stock

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TANS Electronics

Latvia . 1,958 parts In-Stock

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Corphita

USA . 1,693 parts In-Stock

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SupplyDigital Components

Austria . 1,017 parts In-Stock

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UHIMA Technologies

Türkiye . 891 parts In-Stock

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Perfect Parts

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Overview

Elevate your electronic projects with the Onsemi MPS2222, a high-quality Small Signal Bipolar Junction Transistor designed for optimal performance. Manufactured by Onsemi, a trusted name in the industry, this NPN transistor offers reliability and efficiency. Ideal for switching applications, the MPS2222 provides a powerful 0.6A maximum collector current and a nominal transition frequency of 250 MHz. With a minimum DC current gain of 30, this transistor ensures seamless operation at up to 150 °C. Upgrade your designs with the MPS2222 and experience enhanced functionality and precision.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is durable and provides good thermal properties, making the transistor reliable and long-lasting.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplifying circuits, making this product versatile for various electronic applications.

Configuration: SINGLE

Single configuration transistors are simple to use and suitable for basic switching applications.

Transistor Application: SWITCHING

Designed for switching applications, this transistor can rapidly switch between on and off states efficiently.

Package Shape: ROUND

The round package shape allows for easy placement and installation in circuits.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide sturdy connections and are easy to solder onto circuit boards.

No. of Terminals: 3

With three terminals, this transistor is straightforward to integrate into circuits and offers flexibility in connection options.

Maximum Power Dissipation (Abs): 0.625 W

The high power dissipation rating ensures the transistor can handle heat effectively during operation.

Package Style (Meter): CYLINDRICAL

The cylindrical package style is space-efficient and lends itself well to compact circuit designs.

Minimum DC Current Gain (hFE): 30

The minimum DC current gain of 30 indicates good amplification capabilities for signal processing.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this transistor can withstand heat and operate reliably in a variety of conditions.

Maximum Collector-Emitter Voltage: 30 V

The high collector-emitter voltage rating allows for safe operation in circuits with varying voltage requirements.

Transistor Element Material: SILICON

Silicon transistors are known for their efficiency and reliability in electronic devices, making this product a solid choice.

Maximum Collector Current (IC): 0.6 A

The high collector current rating enables the transistor to handle higher currents, suitable for demanding applications.

Terminal Finish: TIN LEAD

Tin-lead terminal finish provides good solderability and ensures a reliable electrical connection.

Terminal Position: BOTTOM

Bottom terminal position makes it easy to mount and install the transistor on circuit boards.

Peak Reflow Temperature °C: 235

With a high peak reflow temperature, this transistor can withstand the soldering process without damage.

Nominal Transition Frequency (fT): 250 MHz

A high transition frequency indicates fast switching speeds, making this transistor suitable for high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MPS2222 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

30 V

Configuration:

Minimum DC Current Gain (hFE):

30

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MPS2222 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-01-077-9982, 5961010779982

NIIN

010779982

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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