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MPS2222AZL1G

Onsemi

MPS2222AZL1G by Onsemi

MPS2222AZL1G by Onsemi is a NPN BJT transistor with max. power dissipation of 0.625W, hFE of 35, and max. operating temp of 150 °C. Ideal for switching applications due to its max collector-emitter voltage of 40V and transition frequency of 300MHz in a cylindrical package style.

Median Price

$0.035

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 7,500 parts In-Stock

1+ parts

-

100+ parts

$0.035

1k+ parts

$0.029

10k+ parts

$0.026

7,500

-

$0.035

$0.029

$0.026

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 538 parts In-Stock

1+ parts

$0.028

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-

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538

$0.028

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Vyrian

USA . 2,645 parts In-Stock

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2,645

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Distributors (Availability)

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Corphita

USA . 1,002 parts In-Stock

1+ parts

$0.026

100+ parts

-

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1,002

$0.026

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Corohmni

South Africa . 114 parts In-Stock

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$0.029

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114

$0.029

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Advanced Electronics

New Zealand . 200 parts In-Stock

1+ parts

$1.265

100+ parts

$1.151

1k+ parts

$1.037

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-

200

$1.265

$1.151

$1.037

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AZTECH Wire

Italy . 868 parts In-Stock

1+ parts

$17.520

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868

$17.520

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SupplyDigital Components

Austria . 5,561 parts In-Stock

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5,561

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UHIMA Technologies

Türkiye . 902 parts In-Stock

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902

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Kulean Microsystems

USA . 687 parts In-Stock

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TANS Electronics

Latvia . 237 parts In-Stock

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Problanco Electronics

Mexico . 61 parts In-Stock

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Overview

Enhance your electronic projects with the MPS2222AZL1G by Onsemi, a top-quality Small Signal Bipolar Junction Transistor (BJT) that offers unparalleled performance and reliability. Manufactured by Onsemi, a trusted leader in the industry, this NPN transistor is ideal for switching applications. With a maximum power dissipation of 0.625 W and maximum collector-emitter voltage of 40 V, this transistor provides excellent value and benefits to customers looking for a high-performing component. Trust Onsemi's expertise and invest in the MPS2222AZL1G for all your electronic needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good insulation and protection for the transistor.

Polarity or Channel Type: NPN

NPN transistors are commonly used and versatile for various circuit applications.

Configuration: SINGLE

Simplifies circuit design and makes it easier to integrate into systems.

Transistor Application: SWITCHING

Suitable for switching applications, providing fast turn on and turn off times.

Package Shape: ROUND

Compact design for space-efficient PCB layouts.

Terminal Form: THROUGH-HOLE

Easy to solder onto PCBs and provides secure connections.

Maximum Power Dissipation (Abs): 0.625 W

Can handle moderate power levels without overheating.

Minimum DC Current Gain (hFE): 35

Ensures proper amplification and signal control in circuits.

Maximum Operating Temperature: 150 °C

Can operate reliably in a wide range of temperature conditions.

Maximum Collector-Emitter Voltage: 40 V

Suitable for low voltage applications without risking damage.

Transistor Element Material: SILICON

Provides good performance and reliability for signal amplification.

Maximum Turn On Time (ton): 35 ns

Fast turn on time for efficient switching operations.

Maximum Collector Current (IC): 0.6 A

Able to handle moderate current levels for various circuit requirements.

Maximum Turn Off Time (toff): 285 ns

Ensures efficient turn off time for switching applications.

Terminal Finish: TIN SILVER COPPER

Provides good conductivity and soldering properties for reliable connections.

Terminal Position: BOTTOM

Facilitates easy mounting and integration into PCB designs.

Peak Reflow Temperature °C: 260

Can withstand high temperatures during reflow soldering processes.

Nominal Transition Frequency (fT): 300 MHz

High transition frequency for high-speed signal processing applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MPS2222AZL1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

EUROPEAN PART NUMBER

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

40 V

Configuration:

Minimum DC Current Gain (hFE):

35

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

285 ns

Maximum Turn On Time (ton):

35 ns

Trade Compliance

MPS2222AZL1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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