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MPS751G

Onsemi

MPS751G by Onsemi

MPS751G by Onsemi is a PNP BJT transistor with 3 terminals, ideal for amplifier applications. It has a max collector-emitter voltage of 60V, max collector current of 2A, and min DC current gain of 40. The package style is cylindrical with through-hole terminals made of tin silver copper.

Median Price

$0.297

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 9,796 parts In-Stock

1+ parts

-

100+ parts

$0.264

1k+ parts

$0.219

10k+ parts

$0.196

9,796

-

$0.264

$0.219

$0.196

DigiKey

USA . 9,796 parts In-Stock

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-

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$0.330

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9,796

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-

$0.330

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Distributors (In-Stock)

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Digiode

USA . 491 parts In-Stock

1+ parts

$0.206

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491

$0.206

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Chip Stock

USA . 17,000 parts In-Stock

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17,000

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Vyrian

USA . 7,691 parts In-Stock

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7,691

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Distributors (Availability)

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Corphita

USA . 670 parts In-Stock

1+ parts

$0.195

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670

$0.195

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Corohmni

South Africa . 140 parts In-Stock

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$0.217

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140

$0.217

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Component Stockers USA

USA . 19,308 parts In-Stock

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$0.220

100+ parts

$0.210

1k+ parts

$0.190

10k+ parts

$0.190

19,308

$0.220

$0.210

$0.190

$0.190

AZTECH Wire

Italy . 367 parts In-Stock

1+ parts

$15.510

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367

$15.510

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Perfect Parts

USA . 29,925 parts In-Stock

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29,925

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QUARKTWIN TECHNOLOGY LTD

USA . 21,911 parts In-Stock

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Continental Prestige Electronics

USA . 13,352 parts In-Stock

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$0.196

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Kulean Microsystems

USA . 7,175 parts In-Stock

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Metaverse IC Inc.

Canada . 6,450 parts In-Stock

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Kepictronics

USA . 6,106 parts In-Stock

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SupplyDigital Components

Austria . 5,867 parts In-Stock

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TANS Electronics

Latvia . 3,312 parts In-Stock

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A-Z Elektronik GmbH

Germany . 1,937 parts In-Stock

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Problanco Electronics

Mexico . 1,421 parts In-Stock

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UHIMA Technologies

Türkiye . 328 parts In-Stock

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328

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Overview

Elevate your electronic projects with the MPS751G by Onsemi, a top-quality Small Signal Bipolar Junction Transistor. Manufactured by the trusted brand Onsemi, this PNP transistor is perfect for amplifier applications with its high performance and reliability. The MPS751G boasts a maximum collector-emitter voltage of 60V and a nominal transition frequency of 75 MHz, making it a versatile component for a wide range of projects. Trust in Onsemi to deliver cutting-edge technology that will take your creations to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material provides durability and protection for the transistor, making it suitable for a variety of applications.

Polarity or Channel Type: PNP

PNP transistors are commonly used in amplification circuits, making this transistor suitable for amplifier applications.

Configuration: SINGLE

Single configuration simplifies circuit design and makes the transistor easy to integrate into various electronic systems.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance in amplification circuits.

Package Shape: ROUND

The round package shape allows for easy mounting and installation in circular layouts or tight spaces.

Maximum Power Dissipation (Abs): 0.625 W

With a maximum power dissipation of 0.625 W, this transistor can handle moderate power levels without overheating.

Package Style (Meter): CYLINDRICAL

The cylindrical package style offers a compact and efficient design for easy handling and installation.

Minimum DC Current Gain (hFE): 40

A minimum DC current gain of 40 ensures reliable and consistent amplification performance in the transistor.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, this transistor can withstand high temperature environments without performance degradation.

Maximum Collector-Emitter Voltage: 60 V

The high collector-emitter voltage rating of 60 V allows this transistor to handle higher voltage levels in amplifier circuits.

Transistor Element Material: SILICON

Silicon is a common and reliable material for transistor elements, ensuring stable and consistent performance over time.

Maximum Collector Current (IC): 2 A

With a maximum collector current of 2 A, this transistor can handle higher current loads in amplifier circuits.

Terminal Finish: TIN SILVER COPPER

The terminal finish of tin silver copper provides good conductivity and corrosion resistance, ensuring reliable connections.

Terminal Position: BOTTOM

Bottom terminal position facilitates easy and secure mounting on circuit boards or other electronic devices.

Peak Reflow Temperature °C: 260

The peak reflow temperature of 260°C allows for efficient soldering and assembly processes during manufacturing.

Nominal Transition Frequency (fT): 75 MHz

With a nominal transition frequency of 75 MHz, this transistor can operate at higher frequency ranges for fast signal processing.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MPS751G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

2 A

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

40

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MPS751G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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