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MPS750RLRP

Onsemi

MPS750RLRP by Onsemi

MPS750RLRP by Onsemi is a PNP BJT transistor with 3 terminals, max. power dissipation of 0.625W, and max. collector current of 2A. Ideal for amplifier applications, it has a min. DC current gain of 40 (hFE), operates up to 150 °C, and offers a nominal transition frequency of 75MHz in a cylindrical package style.

Median Price

$0.082

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 1,120 parts In-Stock

1+ parts

-

100+ parts

$0.082

1k+ parts

$0.068

10k+ parts

$0.060

1,120

-

$0.082

$0.068

$0.060

Distributors (In-Stock)

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Digiode

USA . 775 parts In-Stock

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$0.064

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775

$0.064

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Vyrian

USA . 1,936 parts In-Stock

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$0.067

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1,936

$0.067

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Bristol Electronics

USA . 1,738 parts In-Stock

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1,738

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Atlantic Semiconductor

USA . 1,596 parts In-Stock

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1,596

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Odintec Ltd.

Israel . 997 parts In-Stock

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997

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Sea View Technologies

USA . 284 parts In-Stock

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284

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Distributors (Availability)

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Corphita

USA . 1,843 parts In-Stock

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$0.060

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1,843

$0.060

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Corohmni

South Africa . 200 parts In-Stock

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$0.067

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200

$0.067

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QUARKTWIN TECHNOLOGY LTD

USA . 14,442 parts In-Stock

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14,442

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Kulean Microsystems

USA . 7,648 parts In-Stock

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Problanco Electronics

Mexico . 7,414 parts In-Stock

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Continental Prestige Electronics

USA . 3,230 parts In-Stock

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$0.061

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3,230

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TANS Electronics

Latvia . 2,258 parts In-Stock

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SupplyDigital Components

Austria . 1,045 parts In-Stock

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UHIMA Technologies

Türkiye . 812 parts In-Stock

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Overview

Enhance your electronic projects with the MPS750RLRP by Onsemi, a high-quality Small Signal Bipolar Junction Transistor (BJT) that offers reliability and performance. Manufactured by Onsemi, a leading name in semiconductor technology, this PNP transistor is perfect for amplifier applications. With its durable plastic/epoxy package body material and maximum collector-emitter voltage of 40V, this transistor provides value and benefits to customers looking for efficient and dependable components. Upgrade your designs with the MPS750RLRP and experience the advantages of Onsemi's top-notch technology.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring a longer lifespan.

Polarity or Channel Type: PNP

Suitable for applications where PNP transistors are required, offering versatility in circuit design.

Configuration: SINGLE

Simplifies circuit design and makes it easier to work with a single transistor.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring reliable and efficient performance.

Maximum Power Dissipation (Abs): 0.625 W

Can handle moderate power levels, making it suitable for a wide range of applications.

Maximum Collector-Emitter Voltage: 40 V

Allows the transistor to handle higher voltages, increasing its versatility in different circuits.

Maximum Collector Current (IC): 2 A

Capable of handling higher currents, making it suitable for power applications.

Nominal Transition Frequency (fT): 75 MHz

Offers a high transition frequency, making it suitable for high-frequency applications such as RF circuits.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MPS750RLRP attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

2 A

Maximum Collector-Emitter Voltage:

40 V

Configuration:

Minimum DC Current Gain (hFE):

40

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MPS750RLRP Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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