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MPS750ZL1

Onsemi

MPS750ZL1 by Onsemi

MPS750ZL1 by Onsemi is a PNP BJT transistor with hFE of 40, VCEO of 40V, and IC of 2A. Ideal for amplifier applications due to its high transition frequency of 75MHz. Comes in a cylindrical package with through-hole terminals.

Median Price

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Lifecycle Status

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2

In-Stock Inventory

1k+

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Digiode

USA . 1,952 parts In-Stock

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Vyrian

USA . 1,214 parts In-Stock

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TANS Electronics

Latvia . 4,595 parts In-Stock

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SupplyDigital Components

Austria . 3,959 parts In-Stock

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Corphita

USA . 2,424 parts In-Stock

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Problanco Electronics

Mexico . 1,692 parts In-Stock

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UHIMA Technologies

Türkiye . 790 parts In-Stock

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Kulean Microsystems

USA . 362 parts In-Stock

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Corohmni

South Africa . 335 parts In-Stock

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Overview

Enhance your electronic projects with the MPS750ZL1 by Onsemi, a top-quality Small Signal Bipolar Junction Transistor. Manufactured by Onsemi, this PNP transistor is perfect for amplifier applications, offering reliable performance and durability. With a minimum DC current gain of 40 and a maximum collector-emitter voltage of 40V, this transistor provides exceptional value and benefits to customers. Upgrade your designs with the MPS750ZL1 and experience superior quality and performance like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good thermal conductivity and electrical insulation, making the transistor more reliable and durable.

Polarity or Channel Type: PNP

PNP transistors are commonly used in amplifiers, making this transistor suitable for amplifier applications.

Configuration: SINGLE

Single configuration transistors are easy to use and suitable for simple amplifier circuits.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance in signal amplification.

Package Shape: ROUND

Round package shape allows for easy mounting and installation in electronic circuits.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide strong mechanical connections and are easy to solder onto circuit boards.

No. of Terminals: 3

Having 3 terminals allows for easy connection in circuits and provides flexibility in design.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this transistor can withstand harsh environmental conditions and high temperatures.

Maximum Collector-Emitter Voltage: 40 V

This high voltage rating allows for the transistor to be used in a variety of applications requiring higher voltages.

Maximum Collector Current (IC): 2 A

With a high collector current rating, this transistor can handle higher currents without overheating or damage.

Nominal Transition Frequency (fT): 75 MHz

The high transition frequency makes this transistor suitable for high-frequency amplifier applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MPS750ZL1 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

EUROPEAN PART NUMBER

Maximum Collector Current (IC):

2 A

Maximum Collector-Emitter Voltage:

40 V

Configuration:

Minimum DC Current Gain (hFE):

40

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MPS750ZL1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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