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MPS751_D26Z

Onsemi

MPS751_D26Z by Onsemi

MPS751_D26Z by Onsemi is a PNP BJT with hFE of 40, VCEO of 60V, and IC of 2A. Ideal for applications requiring high-speed switching in electronic circuits. Package style: Cylindrical, terminals: 3, and max temp: 150°C make it versatile for various designs.

Median Price

$0.145

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 309 parts In-Stock

1+ parts

$0.720

100+ parts

$0.286

1k+ parts

$0.195

10k+ parts

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309

$0.720

$0.286

$0.195

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Arrow

USA . 6,000 parts In-Stock

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$0.131

6,000

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$0.131

Verical

USA . 6,000 parts In-Stock

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$0.131

6,000

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$0.131

Rochester

USA . 119 parts In-Stock

1+ parts

-

100+ parts

$0.159

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$0.132

10k+ parts

$0.117

119

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$0.159

$0.132

$0.117

Distributors (In-Stock)

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Digiode

USA . 2,223 parts In-Stock

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$0.124

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$0.124

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Vyrian

USA . 265 parts In-Stock

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$0.130

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265

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Sensible Micro Corp

USA . 21,700 parts In-Stock

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21,700

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Chip Stock

USA . 15,000 parts In-Stock

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15,000

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Distributors (Availability)

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Corphita

USA . 2,334 parts In-Stock

1+ parts

$0.117

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2,334

$0.117

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Corohmni

South Africa . 67 parts In-Stock

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$0.130

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67

$0.130

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Lixinc

USA . 10,103 parts In-Stock

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TANS Electronics

Latvia . 6,343 parts In-Stock

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6,343

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Kepictronics

USA . 4,000 parts In-Stock

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4,000

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Problanco Electronics

Mexico . 3,703 parts In-Stock

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Supply Digital

USA . 1,725 parts In-Stock

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1,725

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Authorized Procurement Solutions

USA . 1,000 parts In-Stock

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1,000

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SupplyDigital Components

Austria . 934 parts In-Stock

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934

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Kulean Microsystems

USA . 468 parts In-Stock

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468

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UHIMA Technologies

Türkiye . 401 parts In-Stock

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401

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Overview

Upgrade your electronic projects with the reliable MPS751_D26Z transistor by Onsemi. Crafted from high-quality materials and backed by the reputation of a trusted manufacturer, this PNP small signal bipolar junction transistor offers exceptional performance and durability. Ideal for a wide range of applications, this single configuration transistor provides a seamless solution for your electronics needs. Experience the value and benefits of this product as you enhance your projects with ease and precision. Elevate your designs with the MPS751_D26Z and unlock endless possibilities in your creations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the transistor lightweight and durable, making it suitable for a wide range of applications.

Polarity or Channel Type: PNP

The PNP configuration allows for easy integration into existing circuit designs and ensures compatibility with other PNP devices.

Configuration: SINGLE

The single configuration simplifies circuit design and makes the transistor easy to use for various applications.

Package Shape: ROUND

The round package shape allows for easy installation and placement on PCBs, saving space and ensuring efficient use of board real estate.

Terminal Form: THROUGH-HOLE

The through-hole terminal form provides a secure connection and makes soldering of the transistor easy and convenient.

No. of Terminals: 3

Having 3 terminals allows for versatility in circuit design and ensures compatibility with standard transistor configurations.

Package Style (Meter): CYLINDRICAL

The cylindrical package style provides a compact and efficient form factor, suitable for space-constrained applications.

Minimum DC Current Gain (hFE): 40

A higher minimum DC current gain ensures stable and reliable amplification in various circuit applications.

Maximum Operating Temperature: 150 °C

The high operating temperature range of 150°C makes the transistor reliable in demanding environments and ensures long-term performance.

Maximum Collector-Emitter Voltage: 60 V

The high maximum collector-emitter voltage rating of 60V allows for the transistor to be used in a wide range of voltage applications.

Transistor Element Material: SILICON

The use of silicon as the transistor element material ensures high performance, reliability, and efficiency in various circuit applications.

Maximum Collector Current (IC): 2 A

With a maximum collector current of 2A, the transistor can handle higher current loads, making it suitable for power applications.

Terminal Finish: MATTE TIN

The matte tin terminal finish provides a reliable and durable contact surface, ensuring secure connections and long-term performance.

Terminal Position: BOTTOM

The terminal position at the bottom of the transistor makes it easy to mount and integrate into circuit designs, allowing for efficient PCB layout.

Nominal Transition Frequency (fT): 75 MHz

The high nominal transition frequency of 75MHz allows for fast switching speeds and high-frequency operation, making the transistor suitable for high-speed applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MPS751_D26Z attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

2 A

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

40

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MPS751_D26Z Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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