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MPS750RLRM

Onsemi

MPS750RLRM by Onsemi

MPS750RLRM by Onsemi is a PNP BJT transistor with hFE of 40, IC of 2A, and VCE of 40V. Ideal for amplifier applications due to its high transition frequency of 75MHz and operating temperature up to 150 °C. Packaged in cylindrical shape with through-hole terminals for easy installation.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 1,622 parts In-Stock

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Digiode

USA . 993 parts In-Stock

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993

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Problanco Electronics

Mexico . 7,757 parts In-Stock

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7,757

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Kulean Microsystems

USA . 7,648 parts In-Stock

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TANS Electronics

Latvia . 3,028 parts In-Stock

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SupplyDigital Components

Austria . 2,388 parts In-Stock

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Corphita

USA . 1,978 parts In-Stock

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1,978

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UHIMA Technologies

Türkiye . 343 parts In-Stock

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Corohmni

South Africa . 265 parts In-Stock

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Overview

Unleash the power of innovation with the MPS750RLRM by Onsemi. Elevate your projects with this high-quality Small Signal BJT transistor, designed for amplifier applications. With a maximum operating temperature of 150 °C and a maximum collector-emitter voltage of 40V, this PNP transistor offers unparalleled performance and reliability. Trust in Onsemi's reputation for excellence and experience the benefits of superior design and craftsmanship. Upgrade your electronic creations today with the MPS750RLRM and unlock a world of possibilities.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the transistor, making it suitable for various environments and handling.

Polarity or Channel Type: PNP

PNP transistors are commonly used in amplifier circuits, making this transistor ideal for amplifier applications.

Configuration: SINGLE

The single configuration simplifies circuit design and implementation, making it user-friendly for both hobbyists and professionals.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, ensuring optimal performance and reliability in amplification circuits.

Package Shape: ROUND

The round shape allows for easy mounting and installation in various devices and circuit boards.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide strong connections and facilitate easy soldering during PCB assembly.

No. of Terminals: 3

The three terminals allow for versatile connectivity options and compatibility with a range of circuit configurations.

Package Style (Meter): CYLINDRICAL

The cylindrical package style enhances durability and heat dissipation, ensuring stable performance under varying operating conditions.

Minimum DC Current Gain (hFE): 40

A minimum hFE of 40 ensures amplification of input signals with consistent and reliable performance.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150 °C, this transistor can withstand high-temperature environments without sacrificing performance.

Maximum Collector-Emitter Voltage: 40 V

The 40V maximum voltage rating ensures the safe operation of the transistor in various circuit configurations.

Transistor Element Material: SILICON

Silicon transistors offer high performance, low noise, and reliability, making this product a desirable choice for amplifier applications.

Maximum Collector Current (IC): 2 A

With a maximum collector current of 2A, this transistor can handle higher current loads in amplifier circuits without overheating or failing.

Terminal Finish: TIN LEAD

The tin-lead terminal finish provides good solderability and conductivity, ensuring reliable connections for optimal circuit performance.

Terminal Position: BOTTOM

Bottom terminal position facilitates easy PCB mounting and soldering, enhancing the overall ease of use and integration in circuit designs.

Nominal Transition Frequency (fT): 75 MHz

A high nominal transition frequency of 75MHz enables this transistor to amplify higher-frequency signals with excellent gain and fidelity.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MPS750RLRM attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

2 A

Maximum Collector-Emitter Voltage:

40 V

Configuration:

Minimum DC Current Gain (hFE):

40

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MPS750RLRM Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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