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MPS750RLRE

Onsemi

MPS750RLRE by Onsemi

MPS750RLRE by Onsemi is a PNP BJT transistor with hFE of 40, VCEO of 40V, and IC of 2A. Ideal for amplifier applications, it operates up to 150 °C with fT of 75MHz in a cylindrical package.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 1,187 parts In-Stock

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Digiode

USA . 503 parts In-Stock

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Kulean Microsystems

USA . 3,613 parts In-Stock

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Problanco Electronics

Mexico . 2,769 parts In-Stock

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TANS Electronics

Latvia . 2,762 parts In-Stock

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Corphita

USA . 2,467 parts In-Stock

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SupplyDigital Components

Austria . 652 parts In-Stock

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UHIMA Technologies

Türkiye . 341 parts In-Stock

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Corohmni

South Africa . 143 parts In-Stock

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Overview

Discover the power of the MPS750RLRE by Onsemi, a top-quality Small Signal Bipolar Junction Transistor perfect for amplifier applications. With a maximum collector-emitter voltage of 40V and a minimum DC current gain of 40, this PNP transistor offers unparalleled performance and reliability. Manufactured by Onsemi, a trusted name in the industry, this product guarantees exceptional value and benefits to customers. Whether you're looking to amplify signals or enhance circuit performance, the MPS750RLRE is the ideal choice for all your electronic needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and reliable housing material for the transistor.

Polarity or Channel Type: PNP

Suitable for applications where PNP transistors are needed.

Configuration: SINGLE

Simplifies circuit design by having a single transistor component.

Transistor Application: AMPLIFIER

Specifically designed for amplification purposes.

Package Shape: ROUND

Space-saving design with a round shape.

Terminal Form: THROUGH-HOLE

Easily mountable on PCBs through holes.

No. of Terminals: 3

Simple and straightforward connection with 3 terminals.

Package Style (Meter): CYLINDRICAL

Cylindrical package style for easy handling and installation.

Minimum DC Current Gain (hFE): 40

Provides consistent and reliable amplification.

Maximum Operating Temperature: 150 °C

Suitable for a wide range of operating temperatures up to 150 °C.

Maximum Collector-Emitter Voltage: 40 V

Able to handle high voltages up to 40V.

Transistor Element Material: SILICON

High-quality silicon material for improved performance and longevity.

Maximum Collector Current (IC): 2 A

Capable of handling currents up to 2A.

Terminal Finish: TIN LEAD

Good conductivity and durability with tin lead terminal finish.

Terminal Position: BOTTOM

Bottom terminal position for easy integration into circuits.

Nominal Transition Frequency (fT): 75 MHz

High transition frequency for fast signal processing.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MPS750RLRE attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

2 A

Maximum Collector-Emitter Voltage:

40 V

Configuration:

Minimum DC Current Gain (hFE):

40

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MPS750RLRE Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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