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MPS750RLRAG

Onsemi

MPS750RLRAG by Onsemi

MPS750RLRAG by Onsemi is a PNP BJT transistor with 3 terminals, max power dissipation of 1.5W, and max collector current of 2A. Ideal for amplifier applications, it has a min DC current gain of 40 (hFE), operates up to 150 °C, and features a cylindrical package style.

Median Price

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Lifecycle Status

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3

In-Stock Inventory

1k+

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Chip Stock

USA . 70,000 parts In-Stock

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Digiode

USA . 2,278 parts In-Stock

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Vyrian

USA . 1,627 parts In-Stock

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TANS Electronics

Latvia . 8,155 parts In-Stock

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SupplyDigital Components

Austria . 8,116 parts In-Stock

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Kulean Microsystems

USA . 2,923 parts In-Stock

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Problanco Electronics

Mexico . 2,303 parts In-Stock

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UHIMA Technologies

Türkiye . 551 parts In-Stock

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Corohmni

South Africa . 226 parts In-Stock

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Corphita

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Overview

Discover the superior quality and performance of the MPS750RLRAG by Onsemi, a trusted manufacturer in the industry. This Small Signal Bipolar Junction Transistor delivers exceptional amplification capabilities for a wide range of applications. With its high power dissipation, reliable terminal finish, and durable plastic/epoxy body, this PNP transistor offers unmatched value and benefits to customers. Whether you're looking to enhance your amplifier circuits or improve signal processing, the MPS750RLRAG is the perfect choice for your next project. Unlock the full potential of your designs with this top-of-the-line component from Onsemi.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides good insulation and protection for the internal components of the transistor, enhancing its durability and reliability.

Polarity or Channel Type: PNP

PNP transistors are commonly used in amplifier circuits, making this transistor suitable for amplifier applications.

Configuration: SINGLE

Single configuration simplifies the circuit design and ensures ease of use.

Maximum Power Dissipation (Abs): 1.5 W

High power dissipation capability allows the transistor to handle higher power levels without overheating.

Maximum Operating Temperature: 150 °C

High maximum operating temperature ensures the transistor can withstand elevated temperatures, making it suitable for a wide range of operating conditions.

Maximum Collector-Emitter Voltage: 40 V

High maximum collector-emitter voltage rating provides protection against voltage spikes and ensures safe operation in various circuit configurations.

Maximum Collector Current (IC): 2 A

High maximum collector current rating allows the transistor to handle higher current flows, making it suitable for applications with higher current requirements.

Nominal Transition Frequency (fT): 75 MHz

High nominal transition frequency indicates the transistor's ability to switch at high speeds, making it suitable for applications where fast switching is required.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MPS750RLRAG attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

2 A

Maximum Collector-Emitter Voltage:

40 V

Configuration:

Minimum DC Current Gain (hFE):

40

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MPS750RLRAG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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