Loading...

MPS750RLRA

Onsemi

MPS750RLRA by Onsemi

MPS750RLRA by Onsemi is a PNP BJT transistor with 3 terminals, ideal for amplifier applications. It has a max power dissipation of 0.625W, max collector-emitter voltage of 40V, and max collector current of 2A. Its package style is cylindrical with through-hole terminals in plastic/epoxy material.

Median Price

$0.119

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 5,900 parts In-Stock

1+ parts

-

100+ parts

$0.119

1k+ parts

$0.099

10k+ parts

$0.088

5,900

-

$0.119

$0.099

$0.088

DigiKey

USA . 5,900 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.150

5,900

-

-

-

$0.150

Verical

USA . 5,900 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.110

5,900

-

-

-

$0.110

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,209 parts In-Stock

1+ parts

$0.093

100+ parts

-

1k+ parts

-

10k+ parts

-

2,209

$0.093

-

-

-

Vyrian

USA . 302 parts In-Stock

1+ parts

$0.098

100+ parts

-

1k+ parts

-

10k+ parts

-

302

$0.098

-

-

-

Chip Stock

USA . 51,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

51,000

-

-

-

-

DigiKey Marketplace

USA . 6,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,000

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 1,337 parts In-Stock

1+ parts

$0.088

100+ parts

-

1k+ parts

-

10k+ parts

-

1,337

$0.088

-

-

-

Corohmni

South Africa . 265 parts In-Stock

1+ parts

$0.098

100+ parts

-

1k+ parts

-

10k+ parts

-

265

$0.098

-

-

-

Component Stockers USA

USA . 7,900 parts In-Stock

1+ parts

$0.100

100+ parts

$0.090

1k+ parts

$0.080

10k+ parts

-

7,900

$0.100

$0.090

$0.080

-

SupplyDigital Components

Austria . 8,137 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

8,137

-

-

-

-

Kulean Microsystems

USA . 7,006 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

7,006

-

-

-

-

Continental Prestige Electronics

USA . 6,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.088

10k+ parts

-

6,000

-

-

$0.088

-

Problanco Electronics

Mexico . 3,894 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,894

-

-

-

-

UHIMA Technologies

Türkiye . 763 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

763

-

-

-

-

TANS Electronics

Latvia . 221 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

221

-

-

-

-

Overview

Enhance your electronic projects with the MPS750RLRA Small Signal Bipolar Junction Transistor by Onsemi. Known for their top-notch quality and reliability, Onsemi delivers cutting-edge technology to meet all your amplification needs. Whether you're working on audio amplifiers, signal processing circuits, or other electronic applications, this PNP transistor offers superior performance and efficiency. Trust Onsemi to provide the value and benefits you need to bring your projects to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Enhances durability and reliability of the transistor, making it suitable for use in various environments.

Polarity or Channel Type: PNP

Allows for easy integration into PNP circuit designs, making it versatile for amplification applications.

Configuration: SINGLE

Simplified design with single configuration for straightforward implementation in circuits.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, ensuring optimal performance and efficiency in amplification tasks.

Package Shape: ROUND

Compact and space-saving round shape for efficient placement on circuit boards.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure and reliable connections for stable operation in circuits.

Maximum Power Dissipation (Abs): 0.625 W

High power dissipation capability allows the transistor to handle significant power loads without overheating.

Package Style (Meter): CYLINDRICAL

Cylindrical package style offers easy handling and installation during circuit assembly.

Minimum DC Current Gain (hFE): 40

Minimum DC current gain ensures consistent amplification performance across a range of operating conditions.

Maximum Operating Temperature: 150 °C

Wide operating temperature range allows for reliable performance in varying temperature environments.

Maximum Collector-Emitter Voltage: 40 V

High maximum collector-emitter voltage rating provides robust protection against voltage surges and spikes.

Transistor Element Material: SILICON

Silicon material offers excellent electrical properties for high-performance transistor operation.

Maximum Collector Current (IC): 2 A

High collector current rating enables the transistor to handle large current loads in amplifier circuits.

Terminal Finish: TIN LEAD

Tin lead terminal finish ensures good electrical conductivity and solderability for secure connections.

Terminal Position: BOTTOM

Bottom terminal position facilitates easy placement and soldering of the transistor on circuit boards.

Peak Reflow Temperature °C: 235

High peak reflow temperature provides reliable solder joints during the manufacturing process.

Nominal Transition Frequency (fT): 75 MHz

High transition frequency allows for fast switching and amplification performance in high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MPS750RLRA attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

2 A

Maximum Collector-Emitter Voltage:

40 V

Configuration:

Minimum DC Current Gain (hFE):

40

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MPS750RLRA Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20