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MPS750RLRPG

Onsemi

MPS750RLRPG by Onsemi

MPS750RLRPG by Onsemi is a PNP BJT with 40V VCEO, 2A IC, and 75MHz fT. Ideal for amplifier applications due to its 1.5W power dissipation, SILICON material, and THROUGH-HOLE terminals in a CYLINDRICAL package style. Operating up to 150 °C, it offers reliable performance in various electronic designs.

Median Price

$0.150

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

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TEDSS.com

USA . 32,000 parts In-Stock

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$0.150

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$0.085

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$0.150

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$0.085

Chip Stock

USA . 26,000 parts In-Stock

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Vyrian

USA . 6,518 parts In-Stock

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Digiode

USA . 2,024 parts In-Stock

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Corohmni

South Africa . 422 parts In-Stock

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$0.150

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422

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AZTECH Wire

Italy . 304 parts In-Stock

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$15.510

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304

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Component Stockers USA

USA . 494 parts In-Stock

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$99.990

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QUARKTWIN TECHNOLOGY LTD

USA . 23,536 parts In-Stock

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Kulean Microsystems

USA . 4,601 parts In-Stock

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Problanco Electronics

Mexico . 3,032 parts In-Stock

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Perfect Parts

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TANS Electronics

Latvia . 2,891 parts In-Stock

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Corphita

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UHIMA Technologies

Türkiye . 764 parts In-Stock

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SupplyDigital Components

Austria . 10 parts In-Stock

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Overview

Discover the power of the MPS750RLRPG by Onsemi, a top-quality Small Signal Bipolar Junction Transistor perfect for amplifier applications. With its PNP configuration and impressive specs like a maximum collector-emitter voltage of 40V and a nominal transition frequency of 75MHz, this transistor offers unmatched performance and reliability. Manufactured by Onsemi, a trusted name in the industry, this product ensures durability and precision. Whether you're a DIY enthusiast or a professional in need of high-quality components, the MPS750RLRPG is the perfect choice for your electronic projects. Unlock endless possibilities with this exceptional transistor!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: PNP

Allows for effective amplification of signals in electronic circuits.

Configuration: SINGLE

Simplified design and operation for ease of use.

Transistor Application: AMPLIFIER

Specifically designed for amplifying electrical signals accurately and efficiently.

Package Shape: ROUND

Compact shape for easy integration into circuit designs.

Terminal Form: THROUGH-HOLE

Simplifies the soldering process and provides strong mechanical connections.

Maximum Power Dissipation (Abs): 1.5 W

Can handle moderate power levels without overheating.

Package Style (Meter): CYLINDRICAL

Space-saving design for compact electronic devices.

Minimum DC Current Gain (hFE): 40

Ensures consistent and reliable signal amplification.

Maximum Operating Temperature: 150 °C

Can operate effectively in high-temperature environments.

Maximum Collector-Emitter Voltage: 40 V

Suitable for low-voltage applications.

Transistor Element Material: SILICON

Provides high performance and reliability.

Maximum Collector Current (IC): 2 A

Capable of handling medium current levels.

Terminal Finish: TIN SILVER COPPER

Provides good conductivity and corrosion resistance.

Terminal Position: BOTTOM

Facilitates easy board placement and soldering.

Peak Reflow Temperature °C: 260

Can withstand high-temperature soldering processes.

Nominal Transition Frequency (fT): 75 MHz

Allows for fast signal switching and amplification.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MPS750RLRPG attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

2 A

Maximum Collector-Emitter Voltage:

40 V

Configuration:

Minimum DC Current Gain (hFE):

40

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MPS750RLRPG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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