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MPS750RL1

Onsemi

MPS750RL1 by Onsemi

MPS750RL1 by Onsemi is a PNP BJT transistor with hFE of 40, IC of 2A, and VCE of 40V. Ideal for amplifier applications due to its high transition frequency of 75MHz and operating temperature up to 150 °C. Packaged in cylindrical shape with through-hole terminals for easy installation.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 1,594 parts In-Stock

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Digiode

USA . 1,157 parts In-Stock

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SupplyDigital Components

Austria . 8,353 parts In-Stock

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Problanco Electronics

Mexico . 8,306 parts In-Stock

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Kulean Microsystems

USA . 3,385 parts In-Stock

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Corphita

USA . 2,273 parts In-Stock

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UHIMA Technologies

Türkiye . 516 parts In-Stock

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Corohmni

South Africa . 265 parts In-Stock

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TANS Electronics

Latvia . 151 parts In-Stock

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Overview

Elevate your amplifier projects with the MPS750RL1 by Onsemi. Crafted with high-quality materials and precision engineering, this Small Signal Bipolar Junction Transistor offers unparalleled performance and reliability. Whether you're a seasoned professional or a hobbyist, this PNP transistor is perfect for a wide range of applications, providing exceptional value and benefits. Trust in Onsemi's reputation for excellence and give your projects the cutting-edge technology they deserve.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material provides good protection from external elements, making the transistor durable and reliable for long-term use.

Polarity or Channel Type: PNP

PNP transistors are commonly used in high-power applications and can handle higher current levels, making this transistor suitable for amplifier circuits.

Configuration: SINGLE

Single configuration transistors are easy to use and suitable for simple amplifier circuits, making them a good choice for basic applications.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, this transistor provides good amplification characteristics and performance.

Package Shape: ROUND

The round package shape allows for easy mounting and installation in circular layouts, making it convenient for space-constrained designs.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide strong mechanical support and secure connections, ensuring reliable performance in various circuit configurations.

No. of Terminals: 3

With three terminals, this transistor offers flexibility in circuit connections and configurations, allowing for versatile usage in different applications.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature of 150 °C ensures stable performance even in harsh operating conditions, making it suitable for industrial applications.

Maximum Collector-Emitter Voltage: 40 V

The 40V maximum collector-emitter voltage rating allows for safe operation in circuits with higher voltage levels, enhancing the transistor's reliability.

Transistor Element Material: SILICON

Silicon is a common semiconductor material known for its high performance and reliability, ensuring consistent transistor behavior in various operating conditions.

Maximum Collector Current (IC): 2 A

With a maximum collector current of 2A, this transistor can handle high current levels, making it suitable for power amplifier and switching applications.

Terminal Finish: TIN LEAD

The tin-lead terminal finish provides good solderability and conductivity, ensuring secure connections and stable performance in circuit applications.

Nominal Transition Frequency (fT): 75 MHz

The high nominal transition frequency of 75MHz indicates good amplification capabilities and signal processing speed, making this transistor ideal for high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MPS750RL1 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

EUROPEAN PART NUMBER

Maximum Collector Current (IC):

2 A

Maximum Collector-Emitter Voltage:

40 V

Configuration:

Minimum DC Current Gain (hFE):

40

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MPS750RL1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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