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MSB-709RT1G

Onsemi

MSB-709RT1G by Onsemi

MSB-709RT1G by Onsemi is a PNP BJT transistor with 3 terminals, ideal for amplifier applications. It has a max collector-emitter voltage of 45V, max collector current of 0.1A, and min DC current gain of 210 (hFE). This surface-mount transistor operates up to 150 °C and comes in a small outline package shape.

Median Price

$0.064

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 578,448 parts In-Stock

1+ parts

-

100+ parts

$0.066

1k+ parts

$0.055

10k+ parts

$0.049

578,448

-

$0.066

$0.055

$0.049

DigiKey

USA . 578,448 parts In-Stock

1+ parts

-

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$0.080

578,448

-

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$0.080

Farnell

UK . 578,448 parts In-Stock

1+ parts

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$0.060

578,448

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$0.060

Verical

USA . 447,000 parts In-Stock

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$0.061

447,000

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$0.061

Distributors (In-Stock)

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Digiode

USA . 368 parts In-Stock

1+ parts

$0.051

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-

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368

$0.051

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DigiKey Marketplace

USA . 578,448 parts In-Stock

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578,448

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Chip Stock

USA . 31,000 parts In-Stock

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31,000

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Vyrian

USA . 5,974 parts In-Stock

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5,974

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Prism Electronics

USA . 12 parts In-Stock

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12

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Distributors (Availability)

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Corphita

USA . 147 parts In-Stock

1+ parts

$0.049

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147

$0.049

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Corohmni

South Africa . 405 parts In-Stock

1+ parts

$0.054

100+ parts

-

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405

$0.054

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AZTECH Wire

Italy . 56 parts In-Stock

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$21.480

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56

$21.480

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Continental Prestige Electronics

USA . 578,448 parts In-Stock

1+ parts

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$0.049

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578,448

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$0.049

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Kepictronics

USA . 33,000 parts In-Stock

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33,000

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Authorized Procurement Solutions

USA . 30,000 parts In-Stock

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Perfect Parts

USA . 28,013 parts In-Stock

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S.R.D Solutions

India . 3,000 parts In-Stock

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A-Z Elektronik GmbH

Germany . 2,700 parts In-Stock

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2,700

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TANS Electronics

Latvia . 2,033 parts In-Stock

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Problanco Electronics

Mexico . 1,888 parts In-Stock

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1,888

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Kulean Microsystems

USA . 1,021 parts In-Stock

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Futuretech Components

Singapore . 868 parts In-Stock

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868

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UHIMA Technologies

Türkiye . 636 parts In-Stock

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636

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SupplyDigital Components

Austria . 197 parts In-Stock

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197

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Overview

Unleash the power of innovation with the MSB-709RT1G by Onsemi! Crafted with precision and expertise, this Small Signal Bipolar Junction Transistor (BJT) embodies superior quality and reliability. Perfect for amplifier applications, this PNP transistor offers unparalleled performance in a sleek and compact design. With a high DC current gain and maximum collector-emitter voltage of 45V, the MSB-709RT1G delivers exceptional value and efficiency. Experience the difference with Onsemi's cutting-edge technology – elevate your projects to new heights with this dynamic transistor at your fingertips.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good insulation and protection for the transistor, making it durable and reliable for long-term use.

Polarity or Channel Type: PNP

PNP transistors are commonly used in amplification applications, making this transistor suitable for amplifier circuits.

Configuration: SINGLE

A single configuration simplifies circuit design and integration, making it easier to use in various applications.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance in signal amplification tasks.

Surface Mount: YES

Surface mount capability allows for easy and compact PCB assembly, saving space and reducing overall system size.

Package Shape: RECTANGULAR

Rectangular shape provides a standardized form factor for easy integration into different electronic devices and circuits.

Terminal Form: GULL WING

Gull-wing terminals provide good mechanical strength and solderability, ensuring reliable connections in surface mount applications.

No. of Terminals: 3

Having 3 terminals simplifies the connection process and reduces the chances of wiring errors during installation.

Maximum Power Dissipation (Abs): 0.2 W

With a high power dissipation rating, this transistor can handle moderate power levels without overheating or failing.

Package Style (Meter): SMALL OUTLINE

Small outline packaging saves space and allows for high-density mounting on PCBs, ideal for compact electronic devices.

Minimum DC Current Gain (hFE): 210

High DC current gain ensures efficient current amplification, making this transistor suitable for low-power signal processing applications.

Maximum Operating Temperature: 150 °C

With a high operating temperature range, this transistor can withstand harsh environmental conditions and temperature variations.

Maximum Collector-Emitter Voltage: 45 V

The high collector-emitter voltage rating allows for reliable operation in applications with high voltage requirements.

Transistor Element Material: SILICON

Silicon-based transistors offer high performance and reliability, making them a popular choice in electronic circuits.

Maximum Collector Current (IC): 0.1 A

With a high collector current rating, this transistor can handle moderate current levels without saturation or breakdown.

Terminal Finish: TIN

Tin terminal finish provides good solderability and corrosion resistance, ensuring long-term reliability in various operating conditions.

Terminal Position: DUAL

Dual terminal positions allow for flexible PCB layout and easy connection to other components in the circuit design.

Maximum Time At Peak Reflow Temperature (s): 30

Short reflow time at peak temperature ensures fast and efficient soldering process, reducing assembly time and cost.

Peak Reflow Temperature °C: 260

High peak reflow temperature allows for reliable solder joints and prevents solder defects during assembly and rework processes.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MSB-709RT1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

45 V

Configuration:

Minimum DC Current Gain (hFE):

210

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

MSB-709RT1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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