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MSB-709RT1

Onsemi

MSB-709RT1 by Onsemi

The Onsemi MSB-709RT1 is a PNP BJT transistor with 3 terminals, suitable for amplifier applications. It has a max power dissipation of 0.2W, hFE of 210, and Vce of 45V. The package is small outline with gull wing terminals, operating up to 150 °C peak reflow temperature.

Median Price

$0.026

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 131,900 parts In-Stock

1+ parts

$0.026

100+ parts

$0.025

1k+ parts

$0.022

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131,900

$0.026

$0.025

$0.022

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Farnell

UK . 131,900 parts In-Stock

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131,900

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Verical

USA . 129,000 parts In-Stock

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129,000

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Distributors (In-Stock)

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Digiode

USA . 118 parts In-Stock

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$0.024

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118

$0.024

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Vyrian

USA . 401 parts In-Stock

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$0.025

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401

$0.025

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DigiKey Marketplace

USA . 131,900 parts In-Stock

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131,900

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MISTER SPROCKETS

USA . 36,000 parts In-Stock

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36,000

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Chip Stock

USA . 22,000 parts In-Stock

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22,000

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Distributors (Availability)

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Corphita

USA . 768 parts In-Stock

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$0.022

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768

$0.022

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Corohmni

South Africa . 267 parts In-Stock

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$0.025

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267

$0.025

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Continental Prestige Electronics

USA . 131,900 parts In-Stock

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$0.020

131,900

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$0.020

Kepictronics

USA . 30,000 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 9,748 parts In-Stock

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9,748

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Authorized Procurement Solutions

USA . 9,500 parts In-Stock

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9,500

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Kulean Microsystems

USA . 4,740 parts In-Stock

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4,740

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SupplyDigital Components

Austria . 3,899 parts In-Stock

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Problanco Electronics

Mexico . 3,505 parts In-Stock

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TANS Electronics

Latvia . 2,400 parts In-Stock

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2,400

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A-Z Elektronik GmbH

Germany . 1,800 parts In-Stock

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1,800

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Futuretech Components

Singapore . 868 parts In-Stock

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868

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Metaverse IC Inc.

Canada . 724 parts In-Stock

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724

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UHIMA Technologies

Türkiye . 419 parts In-Stock

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419

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Overview

Unlock the ultimate power of amplification with the MSB-709RT1 by Onsemi. Crafted with precision and expertise, this Small Signal Bipolar Junction Transistor (BJT) offers unparalleled quality and performance for your amplifier applications. With its PNP polarity, Gull Wing terminal form, and high DC current gain, this product is designed to exceed your expectations. Trust in Onsemi's reputation for excellence and invest in the MSB-709RT1 for a seamless integration into your projects. Elevate your audio experience with this top-of-the-line transistor.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: PNP

PNP configuration allows for easy integration into existing circuit designs.

Configuration: SINGLE

Simplifies circuit design and reduces complexity.

Transistor Application: AMPLIFIER

Suitable for amplifying signals in electronic circuits.

Surface Mount: YES

Easy to solder and mount on circuit boards.

Maximum Power Dissipation (Abs): 0.2 W

Can dissipate high power levels without overheating.

Terminal Form: GULL WING

Allows for easy soldering and connection to external components.

No. of Terminals: 3

Simple and straightforward connection to other components in a circuit.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures, making it suitable for various environments.

Maximum Collector-Emitter Voltage: 45 V

Can handle high voltage levels without breakdown.

Transistor Element Material: SILICON

Silicon is a common semiconductor material known for its high performance and reliability.

Maximum Collector Current (IC): 0.1 A

Capable of handling moderate current levels.

Terminal Finish: TIN LEAD

Provides good conductivity for efficient signal transfer.

Maximum Time At Peak Reflow Temperature (s): 30

Can withstand high reflow temperatures for a short duration.

Peak Reflow Temperature °C: 235

Can endure high reflow temperatures during manufacturing processes.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MSB-709RT1 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

45 V

Configuration:

Minimum DC Current Gain (hFE):

210

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

MSB-709RT1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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