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MSB710-RT3

Onsemi

MSB710-RT3 by Onsemi

MSB710-RT3 by Onsemi is a PNP BJT transistor with 3 terminals, suitable for amplifier applications. It has a max power dissipation of 0.2W, hFE of 40, and max collector-emitter voltage of 50V. This surface-mount device in a small outline package is ideal for compact electronic designs.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 1,653 parts In-Stock

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Vyrian

USA . 669 parts In-Stock

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Kulean Microsystems

USA . 4,848 parts In-Stock

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SupplyDigital Components

Austria . 4,226 parts In-Stock

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TANS Electronics

Latvia . 4,195 parts In-Stock

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Corphita

USA . 1,122 parts In-Stock

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Problanco Electronics

Mexico . 582 parts In-Stock

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UHIMA Technologies

Türkiye . 411 parts In-Stock

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Corohmni

South Africa . 219 parts In-Stock

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Overview

Enhance your electronic projects with the MSB710-RT3 by Onsemi, a high-quality Small Signal Bipolar Junction Transistor (BJT) ideal for amplifier applications. Manufactured by Onsemi, known for their superior products, this PNP transistor offers reliability and performance. With its compact design and maximum power dissipation of 0.2W, this transistor is perfect for space-constrained applications. Trust Onsemi to provide you with the best components for your projects, ensuring efficiency and quality every time.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material provides good insulation and durability, making the transistor resistant to environmental factors and mechanical stress.

Polarity or Channel Type: PNP

PNP transistors are commonly used in amplifiers and signal switching circuits, making this transistor suitable for such applications.

Configuration: SINGLE

Single configuration simplifies circuit design and integration, making the transistor easy to use in various electronic projects.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance and efficiency in amplification tasks.

Surface Mount: YES

Surface mount capability allows for easy and secure mounting on circuit boards, saving space and facilitating mass production.

Package Shape: RECTANGULAR

Rectangular shape provides a standard form factor for easy integration into different circuit designs and setups.

Terminal Form: GULL WING

Gull wing terminals facilitate easy soldering and good electrical connections, improving reliability and performance.

No. of Terminals: 3

Three terminals provide necessary connections for input, output, and biasing, allowing for versatile use in different circuit configurations.

Maximum Power Dissipation (Abs): 0.2 W

High power dissipation capability ensures the transistor can handle heat generated during operation, increasing its reliability and longevity.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space on the circuit board, ideal for compact electronic devices and high-density layouts.

Minimum DC Current Gain (hFE): 40

Minimum DC current gain of 40 ensures good amplification capabilities and stable operation in various amplifier circuits.

Maximum Operating Temperature: 150 °C

High maximum operating temperature allows the transistor to function reliably in a wide range of environmental conditions and applications.

Maximum Collector-Emitter Voltage: 50 V

Maximum collector-emitter voltage of 50 V provides adequate headroom for handling different voltage levels, ensuring safe and reliable operation.

Transistor Element Material: SILICON

Silicon material offers high performance, low noise, and high frequency capabilities, making it a suitable choice for small signal applications.

Maximum Collector Current (IC): 0.5 A

Maximum collector current of 0.5 A allows the transistor to handle moderate current levels, making it versatile for different amplifier and switching tasks.

Terminal Finish: TIN LEAD

Tin lead terminal finish provides good solderability and conductivity, ensuring reliable electrical connections and ease of assembly.

Terminal Position: DUAL

Dual terminal position allows for flexibility in mounting and circuit design, accommodating different PCB layouts and connection requirements.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MSB710-RT3 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

40

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

MSB710-RT3 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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