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NSTB1002DXV5T1

Onsemi

NSTB1002DXV5T1 by Onsemi

NSTB1002DXV5T1 by Onsemi is a Small Signal BJT with NPN and PNP polarity. It features cascaded configuration with 2 elements, built-in resistor, and a max collector-emitter voltage of 50V. Ideal for switching applications, this transistor has a min hFE of 30 and peak reflow temperature of 260 °C.

Median Price

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Lifecycle Status

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3

In-Stock Inventory

1k+

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Chip Stock

USA . 37,000 parts In-Stock

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Vyrian

USA . 5,022 parts In-Stock

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Digiode

USA . 640 parts In-Stock

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AZTECH Wire

Italy . 554 parts In-Stock

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Kulean Microsystems

USA . 5,428 parts In-Stock

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SupplyDigital Components

Austria . 5,175 parts In-Stock

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A-Z Elektronik GmbH

Germany . 4,926 parts In-Stock

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Problanco Electronics

Mexico . 1,949 parts In-Stock

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Corphita

USA . 1,524 parts In-Stock

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UHIMA Technologies

Türkiye . 870 parts In-Stock

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TANS Electronics

Latvia . 478 parts In-Stock

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Corohmni

South Africa . 365 parts In-Stock

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Overview

Elevate your electronics projects with the NSTB1002DXV5T1 by Onsemi. As a leader in small signal bipolar junction transistors, Onsemi delivers top-notch quality and reliability. This versatile transistor is perfect for switching applications, offering cascaded configuration with built-in resistors for added convenience. With NPN and PNP polarity options, this transistor provides flexibility and efficiency. Say goodbye to compatibility issues with its surface mount design and enjoy seamless integration into your circuits. Trust Onsemi to deliver cutting-edge technology that meets your needs. Experience the advantages of the NSTB1002DXV5T1 today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components.

Polarity or Channel Type: NPN AND PNP

Offers versatility for different circuit designs and applications.

Configuration: CASCADED, 2 ELEMENTS WITH BUILT-IN RESISTOR

Simplifies circuit design by integrating resistors and multiple elements in one package.

Transistor Application: SWITCHING

Ideal for switching applications due to its fast turn-on and turn-off times.

Surface Mount: YES

Allows for easy and convenient assembly on circuit boards.

Package Shape: RECTANGULAR

Enables compact placement on a circuit board for efficient use of space.

Maximum Power Dissipation (Abs): 0.5 W

Can handle higher power levels without overheating.

Minimum DC Current Gain (hFE): 30

Provides consistent and reliable amplification of signals.

Maximum Collector-Emitter Voltage: 50 V

Suitable for low to moderate voltage applications.

Maximum Turn On Time (ton): 70 ns

Offers fast response times for switching operations.

Maximum Collector Current (IC): 0.1 A

Capable of handling moderate current levels.

Maximum Turn Off Time (toff): 300 ns

Provides efficient turn-off time to prevent circuit delays.

Terminal Finish: TIN

Ensures good electrical conductivity and solderability.

Nominal Transition Frequency (fT): 250 MHz

Suitable for high-frequency applications with fast signal transitions.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) NSTB1002DXV5T1 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

BUILT IN BIAS RESISTOR RATIO IS 1

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

30

JESD-30 Code:

R-PDSO-F5

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

5

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

300 ns

Maximum Turn On Time (ton):

70 ns

Trade Compliance

NSTB1002DXV5T1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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