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NSTB1010XV5T5

Onsemi

NSTB1010XV5T5 by Onsemi

NSTB1010XV5T5 by Onsemi is a Small Signal BJT with NPN and PNP polarity. It features 2 elements with built-in resistor, suitable for switching applications. With a max operating temp of 150 °C, it has a max collector-emitter voltage of 50V and max collector current of 0.1A, making it ideal for various electronic circuits.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

< 1k

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Vyrian

USA . 869 parts In-Stock

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Digiode

USA . 84 parts In-Stock

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SupplyDigital Components

Austria . 7,045 parts In-Stock

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Problanco Electronics

Mexico . 5,954 parts In-Stock

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TANS Electronics

Latvia . 4,913 parts In-Stock

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Corphita

USA . 1,887 parts In-Stock

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UHIMA Technologies

Türkiye . 697 parts In-Stock

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Corohmni

South Africa . 299 parts In-Stock

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Kulean Microsystems

USA . 102 parts In-Stock

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Overview

Enhance your electronic projects with the NSTB1010XV5T5 from Onsemi, a leading manufacturer known for their superior quality and innovation in the field of small signal bipolar junction transistors. This versatile component offers cascaded configuration with built-in resistors, ideal for switching applications. With NPN and PNP channels, a maximum collector-emitter voltage of 50V, and a compact rectangular package design for easy surface mounting, this transistor provides reliability and efficiency in your designs. Elevate your projects with the value and performance that only Onsemi can deliver.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for a variety of applications.

Polarity or Channel Type: NPN AND PNP

Offers versatility in circuit design as both NPN and PNP types are available for use.

Configuration: CASCADED, 2 ELEMENTS WITH BUILT-IN RESISTOR

Integrated resistor helps simplify circuit design and cascaded configuration allows for higher voltage handling capabilities.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient performance in such scenarios.

Surface Mount: YES

Enables easy and secure installation on PCBs, saving space and allowing for automated assembly processes.

Package Shape: RECTANGULAR

Compact and standard shape for easy integration into circuit designs.

No. of Elements: 2

Dual elements provide enhanced functionality and capability in electronic circuits.

No. of Terminals: 5

Sufficient terminals for flexible connections and configurations in circuit designs.

Package Style (Meter): SMALL OUTLINE

Small outline package saves space and allows for denser PCB designs.

Minimum DC Current Gain (hFE): 35

Provides consistent and reliable amplification of current in the transistor.

Maximum Operating Temperature: 150 °C

Wide operating temperature range ensures the transistor's performance in various environmental conditions.

Maximum Collector-Emitter Voltage: 50 V

Allows for higher voltage handling capabilities in the transistor.

Transistor Element Material: SILICON

Silicon material offers good electrical properties and reliability in transistor operation.

Maximum Collector Current (IC): 0.1 A

Sufficient collector current rating for various low-power applications.

Terminal Finish: TIN LEAD

Tin lead finish provides good solderability and conductivity for terminal connections.

Terminal Position: DUAL

Dual terminal positions allow for flexible mounting and wiring options in circuit designs.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) NSTB1010XV5T5 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

BUILT IN BIAS RESISTOR RATIO 1

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

35

JESD-30 Code:

R-PDSO-F5

JESD-609 Code:

e0

No. of Elements:

2

No. of Terminals:

5

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

FLAT

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

NSTB1010XV5T5 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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