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NSTB1005DXV5T1G

Onsemi

NSTB1005DXV5T1G by Onsemi

NSTB1005DXV5T1G by Onsemi is a Small Signal BJT with NPN and PNP polarity, ideal for switching applications. It has a min hFE of 80, max operating temp of 150°C, and max VCE of 50V. With a package style of small outline and surface mount capability, it's suitable for compact electronic designs.

Median Price

$0.098

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 3,469 parts In-Stock

1+ parts

$0.450

100+ parts

-

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$0.092

3,469

$0.450

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$0.092

Rochester

USA . 88,000 parts In-Stock

1+ parts

-

100+ parts

$0.087

1k+ parts

$0.072

10k+ parts

$0.064

88,000

-

$0.087

$0.072

$0.064

DigiKey

USA . 88,000 parts In-Stock

1+ parts

-

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$0.110

88,000

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$0.110

Verical

USA . 48,000 parts In-Stock

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$0.080

48,000

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$0.080

Distributors (In-Stock)

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Digiode

USA . 583 parts In-Stock

1+ parts

$0.067

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583

$0.067

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Vyrian

USA . 792 parts In-Stock

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$0.070

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792

$0.070

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Flip Electronics

USA . 100,000 parts In-Stock

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Bristol Electronics

USA . 3,935 parts In-Stock

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3,935

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Distributors (Availability)

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Corphita

USA . 365 parts In-Stock

1+ parts

$0.064

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365

$0.064

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Component Stockers USA

USA . 102,030 parts In-Stock

1+ parts

$0.070

100+ parts

$0.070

1k+ parts

$0.060

10k+ parts

$0.060

102,030

$0.070

$0.070

$0.060

$0.060

Corohmni

South Africa . 104 parts In-Stock

1+ parts

$0.070

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104

$0.070

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Continental Prestige Electronics

USA . 88,000 parts In-Stock

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$0.085

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88,000

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$0.085

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QUARKTWIN TECHNOLOGY LTD

USA . 20,896 parts In-Stock

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Assy Fe

Spain . 8,000 parts In-Stock

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8,000

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Problanco Electronics

Mexico . 5,574 parts In-Stock

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Metaverse IC Inc.

Canada . 4,000 parts In-Stock

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Kepictronics

USA . 3,183 parts In-Stock

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Kulean Microsystems

USA . 2,395 parts In-Stock

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2,395

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A-Z Elektronik GmbH

Germany . 2,040 parts In-Stock

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Authorized Procurement Solutions

USA . 2,000 parts In-Stock

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2,000

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SupplyDigital Components

Austria . 1,812 parts In-Stock

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TANS Electronics

Latvia . 742 parts In-Stock

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UHIMA Technologies

Türkiye . 14 parts In-Stock

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Overview

Discover the power of the NSTB1005DXV5T1G by Onsemi, a top-quality Small Signal Bipolar Junction Transistor that offers unmatched performance and reliability. With its NPN and PNP configuration, this transistor is perfect for switching applications, delivering seamless functionality in a compact package. Trust in Onsemi's reputation for excellence in semiconductor manufacturing as you experience the benefits of increased efficiency and precision with this versatile component. Upgrade your electronic projects today with the NSTB1005DXV5T1G and unlock a world of possibilities.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy body material makes the transistor lightweight and durable, ideal for various applications.

Polarity or Channel Type: NPN AND PNP

Having both NPN and PNP configurations allows for versatile use in both types of electronic circuits.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor can rapidly switch on and off, making it suitable for various electronic devices.

Surface Mount: YES

The surface mount capability makes it easier to integrate this transistor into compact circuit designs, saving space and reducing assembly time.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature of 150°C, this transistor can withstand heat and operate reliably in demanding environments.

Maximum Collector-Emitter Voltage: 50 V

The high maximum collector-emitter voltage rating of 50V provides a wide range of operating voltages for different applications.

Maximum Collector Current (IC): 0.1 A

The maximum collector current of 0.1A allows this transistor to handle moderate current loads, suitable for many electronic circuits.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) NSTB1005DXV5T1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

BUILT-IN BIAS RESISTOR RATIO IS 1

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

80

JESD-30 Code:

R-PDSO-F5

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

5

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

NSTB1005DXV5T1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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