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NSTB1002DXV5T1G

Onsemi

NSTB1002DXV5T1G by Onsemi

The Onsemi NSTB1002DXV5T1G is a Small Signal BJT with NPN and PNP polarity, ideal for switching applications. It features 2 elements in a cascaded configuration with built-in resistors. With a max collector-emitter voltage of 50V, it operates at up to 150 °C and has a transition frequency of 250MHz.

Median Price

$0.110

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 3,062 parts In-Stock

1+ parts

$0.450

100+ parts

-

1k+ parts

-

10k+ parts

$0.092

3,062

$0.450

-

-

$0.092

Chip1Stop

Japan . 3,900 parts In-Stock

1+ parts

$1.260

100+ parts

$0.269

1k+ parts

$0.155

10k+ parts

-

3,900

$1.260

$0.269

$0.155

-

Rochester

USA . 400,000 parts In-Stock

1+ parts

-

100+ parts

$0.087

1k+ parts

$0.072

10k+ parts

$0.064

400,000

-

$0.087

$0.072

$0.064

DigiKey

USA . 400,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.110

400,000

-

-

-

$0.110

Verical

USA . 188,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.080

188,000

-

-

-

$0.080

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 933 parts In-Stock

1+ parts

$0.067

100+ parts

-

1k+ parts

-

10k+ parts

-

933

$0.067

-

-

-

Vyrian

USA . 2,176 parts In-Stock

1+ parts

$0.070

100+ parts

-

1k+ parts

-

10k+ parts

-

2,176

$0.070

-

-

-

Flip Electronics

USA . 40,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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40,000

-

-

-

-

ACDS - Activité Composants Distribution Service

France . 3,950 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,950

-

-

-

-

Bristol Electronics

USA . 3,950 parts In-Stock

1+ parts

-

100+ parts

$0.169

1k+ parts

$0.101

10k+ parts

$0.068

3,950

-

$0.169

$0.101

$0.068

Dan-Mar Components

USA . 3,950 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,950

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 1,279 parts In-Stock

1+ parts

$0.064

100+ parts

-

1k+ parts

-

10k+ parts

-

1,279

$0.064

-

-

-

Component Stockers USA

USA . 402,485 parts In-Stock

1+ parts

$0.070

100+ parts

$0.070

1k+ parts

$0.060

10k+ parts

$0.060

402,485

$0.070

$0.070

$0.060

$0.060

Corohmni

South Africa . 104 parts In-Stock

1+ parts

$0.070

100+ parts

-

1k+ parts

-

10k+ parts

-

104

$0.070

-

-

-

Perfect Parts

USA . 22,176 parts In-Stock

1+ parts

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100+ parts

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22,176

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-

-

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Kulean Microsystems

USA . 4,102 parts In-Stock

1+ parts

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4,102

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-

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-

Authorized Procurement Solutions

USA . 3,900 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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3,900

-

-

-

-

GreenTree Electronics

Israel . 3,900 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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3,900

-

-

-

-

Assy Fe

Spain . 3,050 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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3,050

-

-

-

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TANS Electronics

Latvia . 2,450 parts In-Stock

1+ parts

-

100+ parts

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2,450

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SupplyDigital Components

Austria . 2,067 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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2,067

-

-

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Problanco Electronics

Mexico . 1,599 parts In-Stock

1+ parts

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100+ parts

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1,599

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UHIMA Technologies

Türkiye . 847 parts In-Stock

1+ parts

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847

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Overview

Enhance your electronic projects with the NSTB1002DXV5T1G by Onsemi, a high-quality Small Signal Bipolar Junction Transistor (BJT) that offers exceptional performance and reliability. Manufactured by Onsemi, a trusted name in the industry, this transistor is perfect for switching applications with its cascadable configuration and built-in resistor. With NPN and PNP polarity options, this versatile component is suitable for a wide range of projects. Experience the value and benefits of this product as it delivers seamless operation and efficiency, making it an essential choice for your electronics needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and mechanical protection, making it suitable for various applications.

Polarity or Channel Type: NPN AND PNP

Versatile as it can be used in both NPN and PNP configurations depending on the circuit requirements.

Configuration: CASCADED, 2 ELEMENTS WITH BUILT-IN RESISTOR

Allows for cascaded connection and includes built-in resistor, simplifying circuit design.

Transistor Application: SWITCHING

Designed specifically for switching applications, providing fast switching speeds.

Surface Mount: YES

Suitable for automated assembly processes and compact PCB designs.

Maximum Collector-Emitter Voltage: 50 V

Can handle relatively high voltages, making it suitable for a wide range of applications.

Nominal Transition Frequency (fT): 250 MHz

High transition frequency allows for high-speed operation, making it suitable for high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) NSTB1002DXV5T1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

BUILT IN BIAS RESISTOR RATIO IS 1

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

30

JESD-30 Code:

R-PDSO-F5

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

5

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

300 ns

Maximum Turn On Time (ton):

70 ns

Trade Compliance

NSTB1002DXV5T1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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