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NSTB60BDW1T1G

Onsemi

NSTB60BDW1T1G by Onsemi

NSTB60BDW1T1G by Onsemi is a Small Signal BJT with NPN and PNP channels, 2 elements with built-in resistor. It has a max collector-emitter voltage of 50V, max operating temp of 150°C, and nominal transition frequency of 140MHz. Ideal for applications requiring high DC current gain and low power dissipation in compact designs.

Median Price

$0.136

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 5,472 parts In-Stock

1+ parts

$0.240

100+ parts

$0.093

1k+ parts

$0.059

10k+ parts

$0.049

5,472

$0.240

$0.093

$0.059

$0.049

DigiKey

USA . 3,105 parts In-Stock

1+ parts

$0.240

100+ parts

$0.092

1k+ parts

$0.060

10k+ parts

$0.042

3,105

$0.240

$0.092

$0.060

$0.042

Flip Electronics (Authorized)

USA . 20,800 parts In-Stock

1+ parts

-

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20,800

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Rochester

USA . 5,960 parts In-Stock

1+ parts

-

100+ parts

$0.073

1k+ parts

$0.060

10k+ parts

$0.054

5,960

-

$0.073

$0.060

$0.054

Verical

USA . 5,960 parts In-Stock

1+ parts

-

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10k+ parts

$0.076

5,960

-

-

-

$0.076

Element14

Singapore . 2,370 parts In-Stock

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-

100+ parts

$0.136

1k+ parts

$0.072

10k+ parts

$0.071

2,370

-

$0.136

$0.072

$0.071

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,725 parts In-Stock

1+ parts

$0.029

100+ parts

-

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1,725

$0.029

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Vyrian

USA . 925 parts In-Stock

1+ parts

$0.031

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925

$0.031

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Flip Electronics

USA . 20,800 parts In-Stock

1+ parts

-

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20,800

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Distributors (Availability)

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Corohmni

South Africa . 59 parts In-Stock

1+ parts

$0.026

100+ parts

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59

$0.026

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Corphita

USA . 198 parts In-Stock

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$0.028

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198

$0.028

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Component Stockers USA

USA . 17,978 parts In-Stock

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$0.030

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$0.030

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$0.030

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17,978

$0.030

$0.030

$0.030

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Perfect Parts

USA . 1,659,840 parts In-Stock

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Kepictronics

USA . 18,000 parts In-Stock

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Kulean Microsystems

USA . 4,309 parts In-Stock

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4,309

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TANS Electronics

Latvia . 3,403 parts In-Stock

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Continental Prestige Electronics

USA . 3,385 parts In-Stock

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100+ parts

$0.057

1k+ parts

$0.038

10k+ parts

$0.024

3,385

-

$0.057

$0.038

$0.024

Authorized Procurement Solutions

USA . 2,500 parts In-Stock

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2,500

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Problanco Electronics

Mexico . 1,281 parts In-Stock

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1,281

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SupplyDigital Components

Austria . 872 parts In-Stock

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UHIMA Technologies

Türkiye . 482 parts In-Stock

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482

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Overview

Onsemi's NSTB60BDW1T1G is a top-tier Small Signal Bipolar Junction Transistor (BJT) designed to deliver superior performance and reliability. With its NPN and PNP polarity, separate configuration, and built-in resistors, this component offers unmatched versatility and efficiency for a wide range of applications. Whether you're working on audio amplification, signal processing, or power management projects, this transistor is the perfect solution. Trust Onsemi's reputation for excellence and innovation, and elevate your designs with the NSTB60BDW1T1G's exceptional quality and value.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the components inside, making the product long-lasting and reliable.

Polarity or Channel Type: NPN AND PNP

Offering both NPN and PNP transistors allows for versatile circuit design options, making it suitable for a variety of applications.

Maximum Power Dissipation (Abs): 0.385 W

With a relatively high power dissipation capacity, this transistor can handle moderate power levels without overheating.

Minimum DC Current Gain (hFE): 80

A higher DC current gain ensures efficient amplification in electronic circuits, leading to better performance.

Maximum Operating Temperature: 150 °C

The high operating temperature range allows the transistor to function reliably in various environments without thermal issues.

Maximum Collector-Emitter Voltage: 50 V

With a high collector-emitter voltage rating, this transistor can withstand higher voltages in circuits without breaking down.

Maximum Collector Current (IC): 0.15 A

The rated collector current allows the transistor to handle moderate current levels, making it suitable for many electronic applications.

Nominal Transition Frequency (fT): 140 MHz

The high transition frequency indicates fast switching speeds, making this transistor ideal for high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) NSTB60BDW1T1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

BUILT IN BIAS RESISTOR RATIO IS 2.13

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

80

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

NSTB60BDW1T1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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