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NSTB60ADW1T1

Onsemi

NSTB60ADW1T1 by Onsemi

NSTB60ADW1T1 by Onsemi is a Small Signal BJT with NPN and PNP types. Features 2 elements with built-in resistor, 6 terminals, and max collector-emitter voltage of 50V. Ideal for applications requiring high transition frequency up to 140MHz in compact designs.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 1,819 parts In-Stock

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Vyrian

USA . 403 parts In-Stock

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403

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Advanced Electronics

New Zealand . 10 parts In-Stock

1+ parts

$0.725

100+ parts

$0.718

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$0.689

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10

$0.725

$0.718

$0.689

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SupplyDigital Components

Austria . 8,248 parts In-Stock

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Problanco Electronics

Mexico . 4,267 parts In-Stock

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Kulean Microsystems

USA . 2,678 parts In-Stock

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TANS Electronics

Latvia . 1,658 parts In-Stock

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Corphita

USA . 1,604 parts In-Stock

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1,604

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UHIMA Technologies

Türkiye . 846 parts In-Stock

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846

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Corohmni

South Africa . 397 parts In-Stock

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Overview

Discover the NSTB60ADW1T1 by Onsemi, a high-quality Small Signal Bipolar Junction Transistor with separate NPN and PNP elements. With built-in resistors and a maximum collector-emitter voltage of 50V, this transistor offers reliable performance in various applications. Its compact rectangular package design and gull wing terminals make it easy to integrate into your projects. Trust Onsemi's expertise in semiconductor manufacturing for superior quality and value. Upgrade your electronic designs with the NSTB60ADW1T1 for efficient power dissipation and excellent signal amplification.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for a variety of applications.

Polarity or Channel Type: NPN AND PNP

Offers versatility as both NPN and PNP transistors are included in the package, allowing for different circuit configurations.

Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

The built-in resistor simplifies circuit design and saves space on the PCB, making it a convenient choice for compact applications.

Surface Mount: YES

Facilitates easy and efficient mounting on the PCB, saving assembly time and making it suitable for automated manufacturing processes.

Package Shape: RECTANGULAR

Offers a standard and easy-to-handle shape for the package, ensuring compatibility with various PCB layouts and assembly processes.

Maximum Power Dissipation (Abs): 0.25 W

Provides a good balance between power handling capability and efficiency for small signal applications.

Minimum DC Current Gain (hFE): 40

Ensures reliable amplification of input signals with a minimum gain of 40, making it suitable for a wide range of signal amplification tasks.

Maximum Collector-Emitter Voltage: 50 V

Handles moderate voltages up to 50V, enabling compatibility with a variety of circuit requirements.

Transistor Element Material: SILICON

Utilizes silicon material known for its reliability and efficiency in transistor applications.

Maximum Collector Current (IC): 0.15 A

Supports collector currents up to 0.15A, suitable for small signal applications that require moderate current handling.

Terminal Finish: TIN LEAD

Provides good solderability and conductivity for secure connections on the PCB.

Nominal Transition Frequency (fT): 140 MHz

Offers high frequency performance up to 140MHz, making it suitable for applications requiring fast switching speeds and high-frequency operation.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) NSTB60ADW1T1 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

BUILT IN BIAS RESISTOR RATIO IS 0.21

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

40

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

NSTB60ADW1T1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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