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NSTB1002DXV5T5G

Onsemi

NSTB1002DXV5T5G by Onsemi

The Onsemi NSTB1002DXV5T5G is a Small Signal BJT with NPN and PNP polarity. It features 2 elements in a cascaded configuration with built-in resistors, suitable for switching applications. With a max collector-emitter voltage of 50V, it has a transition frequency of 250MHz and can handle up to 0.1A collector current.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 2,346 parts In-Stock

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Vyrian

USA . 2,119 parts In-Stock

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Kulean Microsystems

USA . 7,928 parts In-Stock

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Problanco Electronics

Mexico . 5,407 parts In-Stock

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SupplyDigital Components

Austria . 4,114 parts In-Stock

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TANS Electronics

Latvia . 3,588 parts In-Stock

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Corphita

USA . 1,782 parts In-Stock

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Corohmni

South Africa . 485 parts In-Stock

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UHIMA Technologies

Türkiye . 286 parts In-Stock

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Overview

Upgrade your electronic projects with the NSTB1002DXV5T5G by Onsemi. Manufactured by a trusted industry leader, this small signal bipolar junction transistor (BJT) offers cascaded configuration with built-in resistors for efficient switching applications. With NPN and PNP channel types, this device provides versatility in a compact rectangular package. Experience superior performance with a maximum power dissipation of 0.5W and a high collector-emitter voltage of 50V. Whether you're a hobbyist or a professional, the NSTB1002DXV5T5G delivers quality and reliability for all your electronics needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring long-lasting performance.

Polarity or Channel Type: NPN AND PNP

Can be used for a variety of applications due to the availability of both NPN and PNP types.

Configuration: CASCADED, 2 ELEMENTS WITH BUILT-IN RESISTOR

Allows for easy cascading of multiple transistors in a circuit and includes built-in resistors for simplified design.

Transistor Application: SWITCHING

Designed specifically for switching applications, providing reliable and swift response for on/off operations.

Surface Mount: YES

Suitable for surface mount applications, making it convenient for PCB assembly.

Package Shape: RECTANGULAR

Space-efficient design that can easily fit into compact electronic devices.

No. of Terminals: 5

Provides multiple connection points for flexibility in circuit design.

Maximum Power Dissipation (Abs): 0.5W

Can handle moderate power levels, suitable for various low-power applications.

Minimum DC Current Gain (hFE): 30

Ensures consistent and stable amplification of a DC signal.

Maximum Collector-Emitter Voltage: 50V

Can withstand relatively high voltage levels, increasing the range of potential applications.

Transistor Element Material: SILICON

Provides reliable performance and efficiency compared to other materials.

Nominal Transition Frequency (fT): 250 MHz

Capable of high-frequency operation, making it suitable for applications requiring fast signal processing.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) NSTB1002DXV5T5G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

BUILT IN BIAS RESISTOR RATIO IS 1

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

30

JESD-30 Code:

R-PDSO-F5

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

5

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

FLAT

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

300 ns

Maximum Turn On Time (ton):

70 ns

Trade Compliance

NSTB1002DXV5T5G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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