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NSTB60BDW1T1

Onsemi

NSTB60BDW1T1 by Onsemi

NSTB60BDW1T1 by Onsemi is a Small Signal BJT with NPN and PNP polarity, 2 elements with built-in resistor. It has a max collector-emitter voltage of 50V, max collector current of 0.15A, and transition frequency of 140MHz. Ideal for applications requiring high DC current gain and low power dissipation in compact designs.

Median Price

$0.069

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip1Stop

Japan . 2,720 parts In-Stock

1+ parts

$1.340

100+ parts

$0.430

1k+ parts

$0.331

10k+ parts

-

2,720

$1.340

$0.430

$0.331

-

Rochester

USA . 11,970 parts In-Stock

1+ parts

-

100+ parts

$0.066

1k+ parts

$0.055

10k+ parts

$0.049

11,970

-

$0.066

$0.055

$0.049

Verical

USA . 6,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.069

6,000

-

-

-

$0.069

Distributors (In-Stock)

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Digiode

USA . 1,642 parts In-Stock

1+ parts

$0.051

100+ parts

-

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1,642

$0.051

-

-

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Vyrian

USA . 2,715 parts In-Stock

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-

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2,715

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R&J Components

USA . 2,102 parts In-Stock

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2,102

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Distributors (Availability)

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Corphita

USA . 640 parts In-Stock

1+ parts

$0.049

100+ parts

-

1k+ parts

-

10k+ parts

-

640

$0.049

-

-

-

Corohmni

South Africa . 388 parts In-Stock

1+ parts

$0.054

100+ parts

-

1k+ parts

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388

$0.054

-

-

-

AZTECH Wire

Italy . 122 parts In-Stock

1+ parts

$8.050

100+ parts

-

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122

$8.050

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Perfect Parts

USA . 18,601 parts In-Stock

1+ parts

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18,601

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Continental Prestige Electronics

USA . 11,970 parts In-Stock

1+ parts

-

100+ parts

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$0.052

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11,970

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-

$0.052

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TANS Electronics

Latvia . 7,459 parts In-Stock

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7,459

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Kulean Microsystems

USA . 6,433 parts In-Stock

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6,433

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A-Z Elektronik GmbH

Germany . 4,551 parts In-Stock

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4,551

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SupplyDigital Components

Austria . 3,967 parts In-Stock

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3,967

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Problanco Electronics

Mexico . 1,989 parts In-Stock

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1,989

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UHIMA Technologies

Türkiye . 376 parts In-Stock

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376

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Overview

Enhance your electronic projects with the NSTB60BDW1T1 by Onsemi. As a leading manufacturer in the industry, Onsemi guarantees top-notch quality and reliability in their Small Signal Bipolar Junction Transistors. With NPN and PNP configurations, this product offers versatility for a wide range of applications. The built-in resistor and dual elements make it a convenient choice for circuit designs. Experience seamless integration with its gull wing terminals and compact package style. Trust Onsemi to deliver exceptional performance, making the NSTB60BDW1T1 a valuable asset for any project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides durability and protection for the transistor, making it suitable for various operating conditions.

Polarity or Channel Type: NPN AND PNP

Having both NPN and PNP options allows for versatile circuit design and compatibility with different applications.

Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

The built-in resistor simplifies circuit design and saves space on the PCB, making the transistor more user-friendly.

Surface Mount: YES

Surface mount capability enables easy and efficient installation on PCBs, enhancing manufacturing processes.

Package Shape: RECTANGULAR

Rectangular shape allows for efficient placement on the PCB and saves space, making it ideal for compact electronic devices.

Maximum Power Dissipation (Abs): 0.25 W

With a maximum power dissipation of 0.25W, this transistor can handle moderate power levels without overheating.

Minimum DC Current Gain (hFE): 80

A minimum DC current gain of 80 ensures reliable amplification and signal processing in electronic circuits.

Maximum Collector-Emitter Voltage: 50 V

With a maximum collector-emitter voltage of 50V, this transistor can be used in a wide range of voltage applications.

Maximum Collector Current (IC): 0.15 A

The maximum collector current of 0.15A allows the transistor to handle moderate current levels for various applications.

Nominal Transition Frequency (fT): 140 MHz

A high nominal transition frequency of 140MHz enables fast and reliable signal processing in high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) NSTB60BDW1T1 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

BUILT IN BIAS RESISTOR RATIO IS 2.13

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

80

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

NSTB60BDW1T1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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