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NSTB1002DXV5T5

Onsemi

NSTB1002DXV5T5 by Onsemi

NSTB1002DXV5T5 by Onsemi is a Small Signal BJT with NPN and PNP polarity. It features cascaded configuration, 2 elements with built-in resistor, suitable for switching applications. With max collector-emitter voltage of 50V, max current of 0.1A, and fT of 250MHz, it's ideal for high-speed operations in compact designs.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 2,398 parts In-Stock

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Vyrian

USA . 1,326 parts In-Stock

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Problanco Electronics

Mexico . 7,709 parts In-Stock

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Corphita

USA . 1,443 parts In-Stock

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TANS Electronics

Latvia . 1,292 parts In-Stock

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Kulean Microsystems

USA . 918 parts In-Stock

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UHIMA Technologies

Türkiye . 685 parts In-Stock

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SupplyDigital Components

Austria . 363 parts In-Stock

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Corohmni

South Africa . 133 parts In-Stock

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Overview

Enhance your electronic projects with the NSTB1002DXV5T5 by Onsemi, a high-quality Small Signal Bipolar Junction Transistor that offers reliability and performance. Manufactured by Onsemi, a trusted name in the industry, this transistor is perfect for switching applications and comes in a convenient surface mount package. With its cascaded configuration and built-in resistor, this versatile product provides value and efficiency to customers looking to optimize their designs. Trust Onsemi's expertise and elevate your projects with the NSTB1002DXV5T5.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: NPN AND PNP

Having both NPN and PNP options allows for versatility in circuit design, accommodating different requirements.

Configuration: CASCADED, 2 ELEMENTS WITH BUILT-IN RESISTOR

The cascaded configuration with built-in resistor helps in simplifying the circuit design and providing stable performance.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient and reliable performance in such scenarios.

Surface Mount: YES

Surface mount capability enables easy and efficient PCB assembly, saving time and effort during production.

Package Shape: RECTANGULAR

Rectangular shape allows for space-efficient placement on the PCB, optimizing layout design.

No. of Elements: 2

Having 2 elements enhances the transistor's functionality and capability in handling different tasks in a circuit.

Maximum Power Dissipation (Abs): 0.5 W

With a maximum power dissipation of 0.5W, the transistor can handle moderate power levels without overheating.

Minimum DC Current Gain (hFE): 30

A minimum DC current gain of 30 ensures sufficient amplification in the circuit, improving overall performance.

Maximum Collector-Emitter Voltage: 50 V

Capable of withstanding a maximum collector-emitter voltage of 50V, making it suitable for various voltage levels in circuits.

Transistor Element Material: SILICON

Silicon material provides reliability and stability to the transistor, ensuring long-term performance.

Maximum Turn On Time (ton): 70 ns

Fast turn-on time of 70ns allows for quick response in switching operations, improving efficiency.

Maximum Collector Current (IC): 0.1 A

Capable of handling a maximum collector current of 0.1A, suitable for low to moderate current applications.

Maximum Turn Off Time (toff): 300 ns

A maximum turn-off time of 300ns ensures efficient switching transitions, reducing switching losses.

Terminal Finish: TIN

Tin terminal finish provides good conductivity and solderability, ensuring secure connections on the PCB.

Terminal Position: DUAL

Dual terminal position offers flexibility in mounting options and connections, accommodating various PCB layouts.

Peak Reflow Temperature °C: 260

Peak reflow temperature of 260 °C allows for reliable soldering during assembly, ensuring proper connections.

Nominal Transition Frequency (fT): 250 MHz

A high nominal transition frequency of 250MHz indicates high-speed performance, suitable for high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) NSTB1002DXV5T5 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

BUILT IN BIAS RESISTOR RATIO IS 1

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

30

JESD-30 Code:

R-PDSO-F5

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

5

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

FLAT

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

300 ns

Maximum Turn On Time (ton):

70 ns

Trade Compliance

NSTB1002DXV5T5 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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