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MMBT6517LT1G

Onsemi

MMBT6517LT1G by Onsemi

MMBT6517LT1G by Onsemi is a NPN BJT transistor with 3 terminals, ideal for switching applications. It has a max collector-emitter voltage of 350V, max collector current of 0.1A, and min DC current gain of 15. This small outline package with Gull Wing terminals operates up to 150 °C and has a transition frequency of 40MHz.

Median Price

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Lifecycle Status

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7

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J2 Sourcing AB

Sweden . 89,000 parts In-Stock

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Vyrian

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Pegasus Components GmbH

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4 Star Electronics, Inc.

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GSS - Global Semi Support

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AZTECH Wire

Italy . 209 parts In-Stock

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Infinite Electronics LLP (Excess)

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Metaverse IC Inc.

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QUARKTWIN TECHNOLOGY LTD

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TANS Electronics

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Overview

Discover the power of the MMBT6517LT1G small signal bipolar junction transistor by Onsemi. With a single NPN configuration and switching application, this transistor offers high-quality performance for a wide range of electronic applications. From amplifiers to oscillators, this versatile component provides reliability and efficiency in a compact package. Trust in Onsemi's reputation for excellence and innovation to deliver value and benefits to your projects. Upgrade your designs with the MMBT6517LT1G and experience superior results today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring a longer lifespan.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, making them versatile for various applications.

Configuration: SINGLE

Simplify circuit design and reduce complexity by using a single transistor in the configuration.

Transistor Application: SWITCHING

Suitable for switching applications, providing fast response times and efficient operation.

Surface Mount: YES

Enables easy and efficient mounting on circuit boards, saving space and improving manufacturability.

Maximum Power Dissipation (Abs): 0.225 W

Can handle relatively high power dissipation, making it suitable for applications where power requirements are moderate.

Package Shape: RECTANGULAR

Easily fits into standard PCB layouts, enhancing compatibility and ease of integration.

No. of Terminals: 3

Simplifies connections and reduces the likelihood of errors during installation.

Maximum Operating Temperature: 150 °C

Can operate in high-temperature environments without performance degradation, ensuring reliability in various conditions.

Maximum Collector-Emitter Voltage: 350 V

Can handle high voltages, making it suitable for applications requiring high voltage switching.

Transistor Element Material: SILICON

Offers high performance and reliability, common in modern transistor technology.

Maximum Collector Current (IC): 0.1 A

Can handle moderate current levels, suitable for various low to moderate power applications.

Nominal Transition Frequency (fT): 40 MHz

Delivers fast switching speeds, making it ideal for high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MMBT6517LT1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

350 V

Configuration:

Minimum DC Current Gain (hFE):

15

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MMBT6517LT1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-01-568-3199, 5961015683199

NIIN

015683199

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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