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2N3904RLRPG

Onsemi

2N3904RLRPG by Onsemi

2N3904RLRPG by Onsemi is a NPN BJT with max. power dissipation of 1.5W, hFE of 30, and fT of 300MHz. Ideal for low-power applications in electronics due to its max. collector-emitter voltage of 40V and max. collector current of 0.2A.

Median Price

$0.085

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

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Rochester

USA . 186 parts In-Stock

1+ parts

$0.020

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$0.020

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$0.020

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186

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Arrow

USA . 3,915 parts In-Stock

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$0.221

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$0.126

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$0.111

3,915

$0.221

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$0.126

$0.111

Verical

USA . 32,000 parts In-Stock

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$0.085

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$0.085

Distributors (In-Stock)

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Digiode

USA . 1,970 parts In-Stock

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$0.019

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1,970

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Chip Stock

USA . 51,000 parts In-Stock

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Vyrian

USA . 6,553 parts In-Stock

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PC Components Company LLC

USA . 354 parts In-Stock

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354

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Bristol Electronics

USA . 354 parts In-Stock

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354

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Corphita

USA . 585 parts In-Stock

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$0.018

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585

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Corohmni

South Africa . 275 parts In-Stock

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$0.020

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275

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Andel Nordic

Denmark . 261 parts In-Stock

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$0.880

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$0.613

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$0.613

261

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$0.613

AZTECH Wire

Italy . 710 parts In-Stock

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$20.320

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710

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Native Components

USA . 575 parts In-Stock

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$56.214

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$53.966

575

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$53.966

Northwest PG Solutions

USA . 1,078 parts In-Stock

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$61.836

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1,078

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Problanco Electronics

Mexico . 7,803 parts In-Stock

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Kulean Microsystems

USA . 7,454 parts In-Stock

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SupplyDigital Components

Austria . 5,224 parts In-Stock

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TANS Electronics

Latvia . 992 parts In-Stock

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UHIMA Technologies

Türkiye . 887 parts In-Stock

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Overview

Upgrade your electronic projects with the reliable 2N3904RLRPG transistor from Onsemi. With a reputation for quality and innovation, Onsemi delivers small signal bipolar junction transistors that excel in a variety of applications. From amplifiers to switching circuits, this NPN transistor offers high performance and efficiency. Trust Onsemi to provide cutting-edge technology that meets your needs. Experience the difference with the 2N3904RLRPG transistor today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good protection and insulation for the transistor, making it suitable for various applications.

Polarity or Channel Type: NPN

NPN transistors are widely used in amplification and switching applications, offering good performance and reliability.

Configuration: SINGLE

Simplified design with single configuration for ease of use and installation.

Maximum Power Dissipation: 1.5 W

Ability to handle higher power dissipation ensures the transistor can operate efficiently in various circuits.

Maximum Operating Temperature: 150 °C

Withstands high temperatures, suitable for applications that require extended operation in demanding environments.

Maximum Collector-Emitter Voltage: 40 V

Allows for handling higher voltages, making it versatile for different circuit requirements.

Nominal Transition Frequency: 300 MHz

High transition frequency ensures fast response and switching speeds, suitable for high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2N3904RLRPG attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

40 V

Configuration:

Minimum DC Current Gain (hFE):

30

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

250 ns

Maximum Turn On Time (ton):

70 ns

Trade Compliance

2N3904RLRPG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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