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BC368ZL1G

Onsemi

BC368ZL1G by Onsemi

BC368ZL1G by Onsemi is a NPN BJT transistor with 1A IC, 20V VCE, and 65MHz fT. Ideal for amplifier applications due to its high hFE of 85 and max power dissipation of 1.5W. The package is cylindrical with through-hole terminals, making it suitable for various electronic designs.

Median Price

$0.159

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 1,223 parts In-Stock

1+ parts

-

100+ parts

$0.159

1k+ parts

$0.132

10k+ parts

$0.117

1,223

-

$0.159

$0.132

$0.117

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,099 parts In-Stock

1+ parts

$0.124

100+ parts

-

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-

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1,099

$0.124

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Chip Stock

USA . 65,000 parts In-Stock

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65,000

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ComSIT Distribution GmbH

Germany . 11,500 parts In-Stock

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11,500

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Vyrian

USA . 10,642 parts In-Stock

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10,642

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 1,954 parts In-Stock

1+ parts

$0.117

100+ parts

-

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1,954

$0.117

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-

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Corohmni

South Africa . 138 parts In-Stock

1+ parts

$0.130

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138

$0.130

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AZTECH Wire

Italy . 1,088 parts In-Stock

1+ parts

$16.000

100+ parts

-

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1,088

$16.000

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Glotronic Ltd.

UK . 3,700 parts In-Stock

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3,700

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SupplyDigital Components

Austria . 2,550 parts In-Stock

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2,550

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Problanco Electronics

Mexico . 1,745 parts In-Stock

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1,745

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Northwest PG Solutions

USA . 1,640 parts In-Stock

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1,640

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Kulean Microsystems

USA . 1,410 parts In-Stock

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1,410

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TANS Electronics

Latvia . 867 parts In-Stock

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867

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UHIMA Technologies

Türkiye . 362 parts In-Stock

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362

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Native Components

USA . 326 parts In-Stock

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326

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Overview

Enhance your amplifier designs with the BC368ZL1G Small Signal Bipolar Junction Transistor by Onsemi. Manufactured with top-quality materials, this NPN transistor offers exceptional performance and reliability. Ideal for a wide range of applications, including amplifiers, this product delivers superior functionality and efficiency. Experience the value and benefits of Onsemi's expertise in transistor technology with the BC368ZL1G, providing you with the competitive edge you need for your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the transistor, ensuring a longer lifespan.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this transistor suitable for amplifier applications.

Configuration: SINGLE

Simplifies circuit design and makes it easy to integrate into various electronic systems.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance in amplification circuits.

Package Shape: ROUND

The round shape of the package offers easy mounting and alignment on circuit boards.

Terminal Form: THROUGH-HOLE

Facilitates easy soldering and ensures secure connections on the circuit board.

Maximum Power Dissipation (Abs): 1.5 W

Can handle high power levels without overheating, making it reliable in demanding applications.

Minimum DC Current Gain (hFE): 85

Provides high gain, aiding in signal amplification and ensuring accurate output in amplifier circuits.

Maximum Collector-Emitter Voltage: 20 V

Withstands high voltage levels, ensuring stable operation in various electronic systems.

Transistor Element Material: SILICON

Silicon-based transistors offer high performance, reliability, and efficiency in electronic circuits.

Maximum Collector Current (IC): 1 A

Can handle high current levels, making it suitable for applications that require high power output.

Terminal Finish: TIN SILVER COPPER

Provides excellent conductivity and corrosion resistance for reliable electrical connections.

Nominal Transition Frequency (fT): 65 MHz

Offers high frequency response, making it suitable for high-speed switching and amplification applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC368ZL1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

20 V

Configuration:

Minimum DC Current Gain (hFE):

85

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BC368ZL1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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