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BC369RL1

Onsemi

BC369RL1 by Onsemi

BC369RL1 by Onsemi is a PNP BJT transistor with hFE of 60, IC of 1A, and fT of 65MHz. Ideal for amplifier applications due to its high gain and operating temperature up to 150 °C. Its through-hole package makes it suitable for various electronic designs.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 2,339 parts In-Stock

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Vyrian

USA . 1,475 parts In-Stock

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Native Components

USA . 397 parts In-Stock

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$0.052

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$0.050

Kulean Microsystems

USA . 6,576 parts In-Stock

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Problanco Electronics

Mexico . 5,029 parts In-Stock

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SupplyDigital Components

Austria . 4,674 parts In-Stock

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TANS Electronics

Latvia . 3,914 parts In-Stock

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Corphita

USA . 1,458 parts In-Stock

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UHIMA Technologies

Türkiye . 899 parts In-Stock

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Northwest PG Solutions

USA . 439 parts In-Stock

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Corohmni

South Africa . 426 parts In-Stock

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Overview

Unleash the power of high-quality amplification with the BC369RL1 by Onsemi. Crafted by a renowned manufacturer, this small signal bipolar junction transistor offers exceptional performance and reliability. Perfect for amplifier applications, this PNP transistor delivers superior functionality in a single configuration. With a maximum collector-emitter voltage of 20V and a minimum DC current gain of 60, this transistor provides outstanding value and benefits to customers seeking top-notch electronic components. Elevate your projects with the BC369RL1 and experience unparalleled results.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good protection and durability for the transistor, making it suitable for various environments.

Polarity or Channel Type: PNP

Useful for circuits where PNP transistors are required, offering flexibility in design.

Configuration: SINGLE

Simplified design with only one transistor in the package, reducing complexity and making it easier to integrate into circuits.

Transistor Application: AMPLIFIER

Designed specifically for amplification purposes, providing reliable performance in amplifier circuits.

Package Shape: ROUND

Compact and space-saving design, suitable for applications where space is limited.

Terminal Form: THROUGH-HOLE

Easy to solder onto a circuit board, making it user-friendly for hobbyists and professionals alike.

No. of Terminals: 3

Simple and straightforward connectivity, reducing the chances of wiring errors.

Package Style (Meter): CYLINDRICAL

Aesthetically pleasing design with a cylindrical shape, enhancing the appearance of the product.

Minimum DC Current Gain (hFE): 60

Provides a good amplification factor, ensuring reliable signal amplification.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures, making it suitable for applications where heat dissipation is a concern.

Maximum Collector-Emitter Voltage: 20 V

Sufficient voltage rating for many low-power applications, offering protection against voltage spikes.

Transistor Element Material: SILICON

Silicon transistors are known for their reliability and durability, ensuring a long lifespan for the product.

Maximum Collector Current (IC): 1 A

Capable of handling moderate current levels, suitable for a wide range of applications.

Terminal Finish: TIN LEAD

Provides good solderability and conductivity, making it easy to integrate into circuits.

Terminal Position: BOTTOM

Convenient terminal placement for easy soldering and wiring.

Nominal Transition Frequency (fT): 65 MHz

High-transition frequency, ideal for high-frequency applications such as radio-frequency circuits.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC369RL1 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

EUROPEAN PART NUMBER

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

20 V

Configuration:

Minimum DC Current Gain (hFE):

60

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BC369RL1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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