Loading...

BC368RLRM

Onsemi

BC368RLRM by Onsemi

BC368RLRM by Onsemi is a NPN BJT transistor with hFE of 60, IC of 1A, and VCE of 20V. Ideal for amplifier applications due to its high transition frequency of 65MHz. Its through-hole package makes it suitable for various electronic designs.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,289 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,289

-

-

-

-

Digiode

USA . 1,811 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,811

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 951 parts In-Stock

1+ parts

$0.359

100+ parts

-

1k+ parts

-

10k+ parts

$0.345

951

$0.359

-

-

$0.345

Northwest PG Solutions

USA . 828 parts In-Stock

1+ parts

$0.395

100+ parts

-

1k+ parts

-

10k+ parts

$0.348

828

$0.395

-

-

$0.348

TANS Electronics

Latvia . 7,127 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

7,127

-

-

-

-

Problanco Electronics

Mexico . 4,472 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,472

-

-

-

-

Kulean Microsystems

USA . 2,829 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,829

-

-

-

-

Corphita

USA . 1,151 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,151

-

-

-

-

SupplyDigital Components

Austria . 384 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

384

-

-

-

-

UHIMA Technologies

Türkiye . 299 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

299

-

-

-

-

Corohmni

South Africa . 254 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

254

-

-

-

-

Overview

Enhance your electronic projects with the BC368RLRM small signal bipolar junction transistor by Onsemi. Manufactured by a trusted industry leader, this NPN transistor in a convenient cylindrical package offers reliable performance for amplifier applications. With a high DC current gain and maximum collector-emitter voltage, this transistor provides excellent functionality. Trust Onsemi for quality components that deliver value and superior results for your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring a longer lifespan.

Polarity or Channel Type: NPN

Suitable for use in circuits where an NPN transistor is required, offering versatility.

Configuration: SINGLE

Simplifies circuit design and integration, making it easy to use in various applications.

Transistor Application: AMPLIFIER

Designed specifically for amplification purposes, ensuring reliable performance in audio or signal amplification circuits.

Package Shape: ROUND

Compact design and uniform shape for easy mounting and space-saving in circuit layouts.

Terminal Form: THROUGH-HOLE

Facilitates easy soldering onto circuit boards, enhancing the ease of installation and reliability of connections.

No. of Terminals: 3

Standard configuration for a bipolar junction transistor, ensuring compatibility with common circuit layouts.

Maximum Operating Temperature: 150 °C

Can withstand high temperature environments, making it suitable for applications where heat dissipation is a concern.

Maximum Collector-Emitter Voltage: 20 V

Provides a high voltage rating for the collector-emitter junction, increasing the range of applications where the transistor can be safely used.

Maximum Collector Current (IC): 1 A

Capable of handling high collector currents, making it suitable for circuits with higher power requirements.

Terminal Finish: TIN LEAD

Ensures good conductivity and solderability, improving the electrical connection and reliability of the transistor.

Nominal Transition Frequency (fT): 65 MHz

Provides high frequency response for amplification applications, ensuring accurate signal reproduction.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC368RLRM attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

20 V

Configuration:

Minimum DC Current Gain (hFE):

60

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BC368RLRM Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20