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BC368G

Onsemi

BC368G by Onsemi

BC368G by Onsemi is a NPN BJT transistor with 3 terminals, ideal for amplifier applications. It has a max power dissipation of 1.5W, hFE of 85, and operates up to 150 °C. With a max VCE of 20V and IC of 1A, it offers reliable performance in various electronic circuits.

Median Price

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Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

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Vyrian

USA . 7,461 parts In-Stock

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Digiode

USA . 2,079 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 1,960 parts In-Stock

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Anansix

USA . 1,130 parts In-Stock

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ECAB

Sweden . 400 parts In-Stock

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AZTECH Wire

Italy . 557 parts In-Stock

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$22.230

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One Stop Electronics

USA . 149 parts In-Stock

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$43.100

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QUARKTWIN TECHNOLOGY LTD

USA . 24,670 parts In-Stock

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Kulean Microsystems

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Problanco Electronics

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SupplyDigital Components

Austria . 6,506 parts In-Stock

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Perfect Parts

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Glotronic Ltd.

UK . 3,700 parts In-Stock

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Northwest PG Solutions

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Corphita

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Cyclops Electronics Ltd (Excess)

UK . 1,960 parts In-Stock

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UNI Independent Distributors

Spain . 1,664 parts In-Stock

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TANS Electronics

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Native Components

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UHIMA Technologies

Türkiye . 342 parts In-Stock

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Corohmni

South Africa . 299 parts In-Stock

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Overview

Elevate your amplifier performance with the BC368G by Onsemi, a top-quality NPN Small Signal Bipolar Junction Transistor. Manufactured using premium materials and cutting-edge technology, this transistor offers unmatched reliability and efficiency for a wide range of applications. Whether you're a hobbyist or a professional, the BC368G delivers exceptional value, benefits, and advantages that will take your projects to the next level. Trust in Onsemi's expertise and get ready to experience superior results with the BC368G.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection to the transistor, making it suitable for various applications.

Polarity or Channel Type: NPN

NPN transistors are widely used in amplification circuits, making this product versatile for amplifier applications.

Configuration: SINGLE

Simplified and easy to use configuration for amplifier circuits.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, ensuring optimal performance.

Maximum Power Dissipation (Abs): 1.5 W

Can handle high power levels, suitable for amplification tasks that require higher power dissipation.

No. of Terminals: 3

Basic 3-terminal design for easy integration into circuits.

Maximum Collector-Emitter Voltage: 20 V

Can handle relatively high voltage levels, offering flexibility in circuit design.

Nominal Transition Frequency (fT): 65 MHz

High frequency capability allows for efficient signal amplification in a wide range of applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC368G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

20 V

Configuration:

Minimum DC Current Gain (hFE):

85

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BC368G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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