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BC368ZL1

Onsemi

BC368ZL1 by Onsemi

BC368ZL1 by Onsemi is a NPN BJT transistor with 3 terminals, ideal for amplifier applications. It has a max power dissipation of 0.8W, hFE of 85, and operates up to 150 °C. This through-hole transistor features a max collector-emitter voltage of 20V and max collector current of 1A in a cylindrical package.

Median Price

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Lifecycle Status

Suppliers In-Stock

7

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1k+

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Lantek

USA . 226,983 parts In-Stock

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Chip Stock

USA . 54,000 parts In-Stock

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Bristol Electronics

USA . 2,000 parts In-Stock

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Atlantic Semiconductor

USA . 2,000 parts In-Stock

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Digiode

USA . 1,577 parts In-Stock

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Pegasus Components GmbH

Germany . 600 parts In-Stock

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Vyrian

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Native Components

USA . 368 parts In-Stock

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$0.600

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Northwest PG Solutions

USA . 703 parts In-Stock

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$0.660

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Component Stockers USA

USA . 559 parts In-Stock

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$99.990

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GreenTree Electronics

Israel . 206,000 parts In-Stock

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Kulean Microsystems

USA . 5,303 parts In-Stock

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Authorized Procurement Solutions

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Problanco Electronics

Mexico . 4,590 parts In-Stock

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Glotronic Ltd.

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SupplyDigital Components

Austria . 2,089 parts In-Stock

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TANS Electronics

Latvia . 1,175 parts In-Stock

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Corphita

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UHIMA Technologies

Türkiye . 730 parts In-Stock

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Corohmni

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Overview

Enhance your electronics projects with the BC368ZL1 by Onsemi, a top-quality small signal bipolar junction transistor. Manufactured by industry leader Onsemi, this NPN transistor offers superior performance and reliability for amplifier applications. With a maximum collector current of 1A and a minimum DC current gain of 85, this transistor provides excellent power dissipation capabilities and high transition frequency. Upgrade your designs with the BC368ZL1 and experience enhanced functionality and efficiency like never before. Unlock the full potential of your projects with this advanced component from Onsemi.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good protection and durability for the transistor, making it suitable for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, offering reliable performance in amplifier applications.

Configuration: SINGLE

Simplified configuration makes it easy to integrate into circuits and reduces complexity.

Transistor Application: AMPLIFIER

Designed specifically for amplification purposes, ensuring optimum performance in amplifier circuits.

Package Shape: ROUND

The round shape allows for a compact design and easy mounting on circuit boards.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure connections and ease of soldering during component assembly.

Maximum Power Dissipation (Abs): 0.8 W

High power dissipation capability enables the transistor to handle higher power levels without overheating.

Minimum DC Current Gain (hFE): 85

A high DC current gain ensures efficient amplification of signals with minimal input power.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this transistor can withstand elevated temperatures without performance degradation.

Maximum Collector-Emitter Voltage: 20 V

Suitable for applications requiring a maximum collector-emitter voltage of up to 20V.

Transistor Element Material: SILICON

Silicon material offers excellent electrical properties and reliability for the transistor.

Maximum Collector Current (IC): 1 A

Capable of handling a maximum collector current of 1A, making it suitable for medium power applications.

Terminal Finish: TIN LEAD

Tin lead finish ensures good solderability and conductivity for reliable connections.

Terminal Position: BOTTOM

Bottom terminal position facilitates easier PCB mounting and integration into circuit designs.

Peak Reflow Temperature °C: 235

Withstands peak reflow temperatures of up to 235 °C, allowing for efficient soldering processes during assembly.

Nominal Transition Frequency (fT): 65 MHz

High transition frequency enables fast signal switching and amplification, suitable for high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC368ZL1 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

EUROPEAN PART NUMBER

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

20 V

Configuration:

Minimum DC Current Gain (hFE):

85

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BC368ZL1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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