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BC368RL1

Onsemi

BC368RL1 by Onsemi

BC368RL1 by Onsemi is a NPN BJT transistor with hFE of 60, IC of 1A, and fT of 65MHz. Ideal for amplifier applications due to its high gain and operating temperature up to 150 °C. Its through-hole package makes it suitable for various electronic designs.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 1,922 parts In-Stock

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Vyrian

USA . 1,750 parts In-Stock

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SupplyDigital Components

Austria . 6,479 parts In-Stock

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Kulean Microsystems

USA . 3,551 parts In-Stock

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Problanco Electronics

Mexico . 3,237 parts In-Stock

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Corphita

USA . 1,776 parts In-Stock

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UHIMA Technologies

Türkiye . 917 parts In-Stock

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Northwest PG Solutions

USA . 909 parts In-Stock

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TANS Electronics

Latvia . 420 parts In-Stock

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Corohmni

South Africa . 148 parts In-Stock

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Native Components

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Overview

Enhance your amplifier projects with the BC368RL1 by Onsemi, a top-quality NPN small signal bipolar junction transistor. Manufactured by Onsemi, a leading name in semiconductor technology, this transistor offers reliable performance and durability. Ideal for amplifier applications, this product ensures optimal signal amplification and efficiency. With a maximum collector-emitter voltage of 20V and a high DC current gain of 60, the BC368RL1 provides exceptional value and benefits to customers seeking superior quality components for their electronic projects. Upgrade your designs today with the BC368RL1 and experience the difference in performance and reliability.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides a durable and lightweight housing for the transistor, making it suitable for a variety of electronic applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits due to their high input impedance and low output impedance.

Configuration: SINGLE

Simplifies circuit design and reduces complexity, making it easier to integrate into electronic devices.

Transistor Application: AMPLIFIER

Specifically designed for amplification purposes, ensuring reliable and efficient signal amplification.

Package Shape: ROUND

Allows for easy mounting and integration into circular PCB layouts, saving space and improving overall circuit design.

Terminal Form: THROUGH-HOLE

Enables easy soldering onto the PCB, providing a secure and reliable electrical connection.

No. of Terminals: 3

Provides the necessary connections for the transistor to function effectively in a circuit.

Package Style (Meter): CYLINDRICAL

Offers a compact and robust package style that is suitable for small signal applications.

Minimum DC Current Gain (hFE): 60

Ensures consistent and stable amplification of signals in various electronic circuits.

Maximum Operating Temperature: 150 °C

Can withstand higher operating temperatures, making it suitable for applications where heat dissipation is a concern.

Maximum Collector-Emitter Voltage: 20 V

With a high maximum voltage rating, this transistor can handle higher voltages without breakdown.

Transistor Element Material: SILICON

Silicon transistors offer high performance and reliability, making them ideal for various electronic applications.

Maximum Collector Current (IC): 1 A

Capable of handling moderate levels of current, making it suitable for a wide range of circuit applications.

Terminal Finish: TIN LEAD

Provides a reliable electrical connection and ensures good solderability for easy assembly.

Terminal Position: BOTTOM

Enables easy mounting and soldering onto the PCB, simplifying the assembly process.

Nominal Transition Frequency (fT): 65 MHz

Offers a high transition frequency, allowing for fast signal processing and high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC368RL1 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

EUROPEAN PART NUMBER

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

20 V

Configuration:

Minimum DC Current Gain (hFE):

60

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BC368RL1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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