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BC369G

Onsemi

BC369G by Onsemi

BC369G by Onsemi is a PNP BJT transistor with 3 terminals, ideal for amplifier applications. It has a max power dissipation of 1.5W, hFE of 85, and operates up to 150 °C. With a max VCE of 20V and IC of 1A, it's suitable for various electronic circuits requiring high gain and low power consumption.

Median Price

$0.092

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 3,200 parts In-Stock

1+ parts

-

100+ parts

$0.092

1k+ parts

$0.077

10k+ parts

$0.068

3,200

-

$0.092

$0.077

$0.068

Distributors (In-Stock)

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Digiode

USA . 5,025 parts In-Stock

1+ parts

$0.072

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-

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5,025

$0.072

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Vyrian

USA . 3,776 parts In-Stock

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$0.076

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3,776

$0.076

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Anansix

USA . 790 parts In-Stock

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790

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Nova Conductors

Japan . 150 parts In-Stock

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150

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Native Components

USA . 1,037 parts In-Stock

1+ parts

$0.041

100+ parts

-

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$0.039

1,037

$0.041

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$0.039

Corphita

USA . 3,418 parts In-Stock

1+ parts

$0.068

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3,418

$0.068

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Northwest PG Solutions

USA . 2,872 parts In-Stock

1+ parts

$0.074

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$0.065

2,872

$0.074

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$0.065

Corohmni

South Africa . 373 parts In-Stock

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$0.076

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373

$0.076

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Perfect Parts

USA . 8,681 parts In-Stock

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8,681

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UNI Independent Distributors

Spain . 6,655 parts In-Stock

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SupplyDigital Components

Austria . 5,087 parts In-Stock

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TANS Electronics

Latvia . 4,786 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 4,757 parts In-Stock

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Problanco Electronics

Mexico . 4,030 parts In-Stock

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Kulean Microsystems

USA . 3,016 parts In-Stock

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Authorized Procurement Solutions

USA . 2,500 parts In-Stock

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UHIMA Technologies

Türkiye . 778 parts In-Stock

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778

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Overview

Upgrade your electronic projects with the BC369G by Onsemi. Manufactured by a trusted industry leader, this high-quality Small Signal Bipolar Junction Transistor delivers exceptional performance and reliability. Ideal for amplifier applications, this PNP transistor offers a maximum collector current of 1A and a minimum DC current gain of 85. With a maximum power dissipation of 1.5W and a maximum operating temperature of 150 °C, the BC369G provides excellent value and functionality for all your circuit needs. Trust Onsemi for cutting-edge technology and superior products.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring a long lifespan.

Polarity or Channel Type: PNP

Allows for efficient current flow and useful for various amplifier applications.

Configuration: SINGLE

Simplified design and easy integration into circuits.

Transistor Application: AMPLIFIER

Specifically designed for amplification purposes, ensuring reliable performance in audio or signal processing.

Maximum Power Dissipation (Abs): 1.5 W

Can handle higher power levels without overheating, making it suitable for demanding applications.

Maximum Collector-Emitter Voltage: 20 V

Supports higher voltage requirements in circuits, expanding its usability.

Maximum Collector Current (IC): 1 A

Capable of handling high currents, making it suitable for power amplification.

Nominal Transition Frequency (fT): 65 MHz

Offers high frequency response, ideal for fast switching applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC369G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

20 V

Configuration:

Minimum DC Current Gain (hFE):

85

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BC369G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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