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BC369ZL1G

Onsemi

BC369ZL1G by Onsemi

BC369ZL1G by Onsemi is a PNP BJT transistor with 3 terminals, ideal for amplifier applications. It offers a max power dissipation of 1.5W, hFE of 85, and operates at up to 150 °C. With a max collector-emitter voltage of 20V and max collector current of 1A, it is suitable for various electronic circuits requiring high gain and low noise amplification.

Median Price

$0.159

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 7,553 parts In-Stock

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-

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$0.159

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$0.132

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$0.117

7,553

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$0.159

$0.132

$0.117

DigiKey

USA . 7,553 parts In-Stock

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$0.200

7,553

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$0.200

Verical

USA . 2,333 parts In-Stock

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$0.147

2,333

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$0.147

Distributors (In-Stock)

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Digiode

USA . 124 parts In-Stock

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$0.124

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124

$0.124

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J2 Sourcing AB

Sweden . 206,999 parts In-Stock

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Chip Stock

USA . 61,000 parts In-Stock

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Vyrian

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561

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Corphita

USA . 1,803 parts In-Stock

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$0.117

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Component Stockers USA

USA . 13,650 parts In-Stock

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$0.130

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$0.120

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$0.110

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-

13,650

$0.130

$0.120

$0.110

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Corohmni

South Africa . 62 parts In-Stock

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$0.453

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62

$0.453

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Advanced Electronics

New Zealand . 70 parts In-Stock

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$0.976

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$0.888

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$0.800

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70

$0.976

$0.888

$0.800

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AZTECH Wire

Italy . 561 parts In-Stock

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$11.230

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561

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Perfect Parts

USA . 16,762 parts In-Stock

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Continental Prestige Electronics

USA . 9,833 parts In-Stock

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$0.117

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QUARKTWIN TECHNOLOGY LTD

USA . 8,109 parts In-Stock

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A-Z Elektronik GmbH

Germany . 6,602 parts In-Stock

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Kepictronics

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Alle Elektronik GmbH

Germany . 4,401 parts In-Stock

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Authorized Procurement Solutions

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Glotronic Ltd.

UK . 3,700 parts In-Stock

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Problanco Electronics

Mexico . 3,633 parts In-Stock

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Metaverse IC Inc.

Canada . 3,587 parts In-Stock

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Northwest PG Solutions

USA . 2,105 parts In-Stock

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SupplyDigital Components

Austria . 817 parts In-Stock

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Native Components

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Kulean Microsystems

USA . 166 parts In-Stock

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UHIMA Technologies

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TANS Electronics

Latvia . 11 parts In-Stock

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Overview

Discover the superior quality and reliability of the BC369ZL1G by Onsemi, a top-of-the-line Small Signal Bipolar Junction Transistor perfect for amplifier applications. With a maximum operating temperature of 150 °C and a peak reflow temperature of 260°C, this PNP transistor offers unmatched performance and durability. Manufactured by Onsemi, a trusted name in the industry, this product guarantees exceptional value and benefits to customers looking for high-quality electronic components. Upgrade your projects with the BC369ZL1G and experience the advantages of cutting-edge technology in a compact and reliable package.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring a longer lifespan.

Polarity or Channel Type: PNP

Suitable for applications requiring PNP transistors, offering flexibility in circuit design.

Configuration: SINGLE

Simplifies circuit design and makes it easy to integrate into various electronic projects.

Transistor Application: AMPLIFIER

Ideal for amplifier circuits, providing a reliable and efficient performance.

Maximum Power Dissipation (Abs): 1.5 W

Can handle moderate power levels, making it suitable for a variety of applications.

Terminal Form: THROUGH-HOLE

Allows for easy soldering and connection in through-hole PCB designs.

No. of Terminals: 3

Simple to connect and integrate into circuits with minimal terminal connections.

Maximum Operating Temperature: 150 °C

Can operate in high-temperature environments, increasing its versatility.

Maximum Collector-Emitter Voltage: 20 V

Suitable for low-voltage applications, providing precise control over voltages.

Minimum DC Current Gain (hFE): 85

Ensures reliable amplification and signal processing with a high current gain.

Transistor Element Material: SILICON

Offers excellent performance and reliability, typical of silicon-based transistors.

Maximum Collector Current (IC): 1 A

Capable of handling moderate current levels, suitable for various circuit applications.

Terminal Finish: TIN SILVER COPPER

Provides reliable electrical connections and corrosion resistance for long-term usage.

Nominal Transition Frequency (fT): 65 MHz

Suitable for high-frequency applications, offering efficient signal processing capabilities.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC369ZL1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

20 V

Configuration:

Minimum DC Current Gain (hFE):

85

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BC369ZL1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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