Loading...

BC368RLRE

Onsemi

BC368RLRE by Onsemi

BC368RLRE by Onsemi is a NPN BJT transistor with hFE of 60, IC of 1A, and fT of 65MHz. Ideal for amplifier applications due to its high collector-emitter voltage of 20V. Its through-hole terminal form and cylindrical package make it easy to use in various electronic designs.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,442 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,442

-

-

-

-

Digiode

USA . 2,301 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,301

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 310 parts In-Stock

1+ parts

$0.387

100+ parts

-

1k+ parts

-

10k+ parts

$0.372

310

$0.387

-

-

$0.372

Northwest PG Solutions

USA . 1,620 parts In-Stock

1+ parts

$0.426

100+ parts

-

1k+ parts

-

10k+ parts

$0.375

1,620

$0.426

-

-

$0.375

TANS Electronics

Latvia . 7,501 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

7,501

-

-

-

-

SupplyDigital Components

Austria . 3,753 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,753

-

-

-

-

Problanco Electronics

Mexico . 2,672 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,672

-

-

-

-

Kulean Microsystems

USA . 2,218 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,218

-

-

-

-

Corphita

USA . 1,645 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,645

-

-

-

-

UHIMA Technologies

Türkiye . 550 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

550

-

-

-

-

Corohmni

South Africa . 100 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

100

-

-

-

-

Overview

Experience unparalleled performance and reliability with the BC368RLRE by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-quality Small Signal Bipolar Junction Transistors (BJTs) like no other. Ideal for amplifier applications, this NPN transistor offers a DC current gain of 60 and a maximum collector-emitter voltage of 20V. Its cylindrical package shape ensures easy installation, making it the perfect choice for various electronic projects. Trust Onsemi to provide you with cutting-edge technology that guarantees exceptional value and benefits for all your transistor needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good durability and protection to the transistor, making it suitable for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplifier circuits, making this product a suitable choice for amplifier applications.

Configuration: SINGLE

The single configuration simplifies the circuit design and is easy to integrate into electronic systems.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance in such circuits.

Package Shape: ROUND

The round shape allows for easy mounting and integration into electronic systems.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure connections and are convenient for manual soldering during assembly.

No. of Terminals: 3

With 3 terminals, this transistor can be easily integrated into circuits and offers flexibility in connection configurations.

Package Style (Meter): CYLINDRICAL

The cylindrical package style is compact and space-saving, ideal for applications with limited space.

Minimum DC Current Gain (hFE): 60

The minimum DC current gain of 60 ensures consistent and stable amplification in the circuit.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150 °C, this transistor can withstand high-temperature environments.

Maximum Collector-Emitter Voltage: 20 V

The maximum collector-emitter voltage of 20V makes this transistor suitable for low-voltage applications.

Transistor Element Material: SILICON

Silicon material offers good performance and reliability, making this transistor a durable choice for various applications.

Maximum Collector Current (IC): 1 A

With a maximum collector current of 1A, this transistor can handle moderate current levels in the circuit.

Terminal Finish: TIN LEAD

Tin lead terminal finish provides good solderability and ensures reliable connections in the circuit.

Terminal Position: BOTTOM

Bottom terminal position simplifies the mounting process and ensures secure connections in electronic systems.

Nominal Transition Frequency (fT): 65 MHz

With a nominal transition frequency of 65MHz, this transistor offers high-speed performance in amplifier applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC368RLRE attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

20 V

Configuration:

Minimum DC Current Gain (hFE):

60

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BC368RLRE Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20