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BC368RLRA

Onsemi

BC368RLRA by Onsemi

BC368RLRA by Onsemi is a NPN BJT transistor with hFE of 60, VCE of 20V, and IC of 1A. Ideal for amplifier applications, it operates up to 150 °C with fT at 65MHz. The through-hole package has a cylindrical shape with tin-lead finish.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 1,767 parts In-Stock

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Digiode

USA . 1,048 parts In-Stock

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Kulean Microsystems

USA . 5,460 parts In-Stock

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SupplyDigital Components

Austria . 3,781 parts In-Stock

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TANS Electronics

Latvia . 3,701 parts In-Stock

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Corphita

USA . 2,210 parts In-Stock

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Northwest PG Solutions

USA . 2,191 parts In-Stock

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Problanco Electronics

Mexico . 1,709 parts In-Stock

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UHIMA Technologies

Türkiye . 907 parts In-Stock

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Native Components

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Corohmni

South Africa . 474 parts In-Stock

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Overview

Discover the superior performance and reliability of the BC368RLRA NPN transistor from Onsemi. As a leading manufacturer in the industry, Onsemi delivers high-quality components that are perfect for amplifier applications. With a minimum DC current gain of 60 and a maximum operating temperature of 150 °C, this transistor offers unmatched value and efficiency. Trust Onsemi to provide you with the best solutions for your electronic needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the transistor, ensuring longevity and reliability in usage.

Polarity or Channel Type: NPN

Commonly used for switching and amplification applications, making it versatile for various circuit designs.

Configuration: SINGLE

Simplified setup with only one transistor in the package, making it easy to integrate into circuits.

Transistor Application: AMPLIFIER

Specifically designed for amplification purposes, ensuring optimal performance in audio and signal processing applications.

Package Shape: ROUND

Space-efficient design that allows for compact placement on circuit boards or in tight spaces.

Terminal Form: THROUGH-HOLE

Easily soldered onto circuit boards, providing a secure connection for stable operation.

No. of Terminals: 3

Simplified connection configuration for easy integration into circuit designs.

Package Style (Meter): CYLINDRICAL

Uniform shape that fits well in circular or cylindrical housings for a neat and organized circuit layout.

Minimum DC Current Gain (hFE): 60

Provides consistent amplification performance with a minimum gain of 60, ensuring reliable signal processing.

Maximum Operating Temperature: 150 °C

Can handle high temperature environments, suitable for applications where heat dissipation is a concern.

Maximum Collector-Emitter Voltage: 20 V

Safe operating voltage range for the transistor, preventing damage from overvoltage conditions.

Transistor Element Material: SILICON

High-quality material known for its reliability and efficiency in electronic components, ensuring stable performance.

Maximum Collector Current (IC): 1 A

Able to handle high current loads up to 1 ampere, suitable for power amplification applications.

Terminal Finish: TIN LEAD

Provides good conductivity and solderability for secure connections, ensuring stable operation in circuits.

Terminal Position: BOTTOM

Positioned at the bottom for easy mounting and connection in circuit layouts, allowing for efficient installation.

Nominal Transition Frequency (fT): 65 MHz

High frequency capability for fast signal processing, suitable for applications requiring high-speed operation.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC368RLRA attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

20 V

Configuration:

Minimum DC Current Gain (hFE):

60

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BC368RLRA Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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